IKY120N65EH7XKSA1

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  "version": "0.1.0",
  "type": "component",
  "description": "Infineon Technologies IGBT Transistors / Modules, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "IKY120N65EH7XKSA1",
    "manufacturer": "Infineon Technologies",
    "package": "TO-247-4",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "IGBT Transistors / Modules",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/9aa17d8bcce28ece6c55af2ceeaeebdd.pdf",
    "parts": {
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      "lbr": "iky120n65eh7xksa1.lbr"
    },
    "distributor_links": {
      "lcsc": "C20191527",
      "digikey": "448-IKY120N65EH7XKSA1-ND",
      "mouser": "726-IKY120N65EH7XKSA"
    },
    "distributor_check": {
      "checked_at": "2026-11-02T18:10:15Z",
      "source": "Component Ocean /api/assign-pns",
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        "number": "1",
        "name": "C",
        "type": "passive",
        "description": "Collector of the IGBT and cathode of the antiparallel diode, rated VCE = 650 V, with DC collector current up to 160 A at Tc = 25 °C (limited by bondwire) and pulsed collector current up to 480 A."
      },
      {
        "number": "2",
        "name": "E",
        "type": "passive",
        "description": "Power emitter of the IGBT and anode of the antiparallel diode, carrying the main load current (IC = 120 A rated, diode IF up to 160 A at Tc = 25 °C)."
      },
      {
        "number": "3",
        "name": "K",
        "type": "passive",
        "description": "Kelvin (auxiliary) emitter connection for the gate drive return, used for the gate-emitter voltage VGE of ±20 V maximum (±30 V transient for tp ≤ 10 µs)."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the IGBT, with VGE limited to ±20 V (±30 V transient, tp ≤ 10 µs) and a threshold voltage VGEth of 2.9 V min to 4.8 V max at IC = 1.05 mA."
      }
    ],
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