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IKWH70N65WR6

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Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKWH70N65WR6

Infineon Technologies · IGBTs · TO-247-3

IKWH70N65WR6 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a gate-emitter voltage limit of ±20 V (±30 V transient for tp ≤ 10 µs) and a threshold of 3.2 V min, 4 V typ and 4.8 V max at IC = 0.7 mA.
2 C passive Collector, rated 650 V collector-emitter, with DC current of 122 A at Tc = 25 °C and 77 A at Tc = 100 °C, pulsed 210 A.
3 E passive Emitter, with internal emitter inductance of 13 nH measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage VBRCES 650 V IC = 0.2 mA, VGE=0 V 3
Collector-emitter saturation voltage VCEsat 1.55 1.85 V IC = 70 A, VGE = 15 V, Tvj = 25 °C 4
Gate-emitter threshold voltage VGEth 3.2 4 4.8 V IC = 0.7 mA, VCE = VGE 4
Zero gate-voltage collector current ICES 40 µA VCE = 650 V, VGE=0 V, Tvj = 25 °C 4
Zero gate-voltage collector current ICES 0.5 mA VCE = 650 V, VGE=0 V, Tvj = 175 °C 4
Gate-emitter leakage current IGES 100 nA VCE=0 V, VGE = 20 V 4
Diode forward voltage VF 1.3 1.6 V IF = 21.5 A, Tvj = 25 °C 5
Collector-emitter voltage VCE 650 V Tvj ≥ 25 °C 3
DC collector current IC 122 A Tc = 25 °C 3
DC collector current IC 77 A Tc = 100 °C 3
Pulsed collector current ICpulse 210 A tp limited by Tvjmax 3
Turn-off safe operating area 210 A VCE ≤ 650 V, Tvj ≤ 175 °C 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤ 10 µs, D < 0.01 3
Power dissipation Ptot 290 W Tc = 25 °C 3
Power dissipation Ptot 145 W Tc = 100 °C 3
Diode repetitive peak reverse voltage VRRM 650 V Tvj ≥ 25 °C 5
Diode forward current IF 37 A Tc = 25 °C 5
Diode forward current IF 22 A Tc = 100 °C 5
Diode pulsed current IFpulse 70 A tp limited by Tvjmax 5
Storage temperature Tstg -55 150 °C 3
Soldering temperature Tsold 260 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 3
Operating junction temperature Tvj -40 175 °C 5
Mounting torque M 0.6 Nm M3 screw, Maximum of mounting process: 3 3
Thermal resistance, junction-ambient Rth(j-a) 40 K/W 3
IGBT thermal resistance, junction-case Rth(j-c) 0.5 K/W 3
Diode thermal resistance, junction-case Rth(j-c) 1.9 K/W 3
Internal emitter inductance LE 13 nH measured 5 mm (0.197 in.) from case 3
Collector-emitter saturation voltage VCEsat 1.8 V IC = 70 A, VGE = 15 V, Tvj = 175 °C 4
Transconductance gfs 155 S IC = 70 A, VCE = 20 V 4
Input capacitance Cies 5320 pF VCE = 25 V, VGE=0 V, f = 100 kHz 4
Output capacitance Coes 52 pF VCE = 25 V, VGE=0 V, f = 100 kHz 4
Reverse transfer capacitance Cres 22 pF VCE = 25 V, VGE=0 V, f = 100 kHz 4
Gate charge QG 218 nC IC = 70 A, VGE = 15 V, VCC = 520 V 4
Turn-on delay time td(on) 42 ns Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 4
Rise time tr 31 ns Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 4
Turn-off delay time td(off) 378 ns Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 4
Fall time tf 26 ns Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 4
Turn-on energy Eon 2.2 mJ Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 4
Turn-off energy Eoff 1.07 mJ Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 5
Total switching energy Ets 3.26 mJ Tvj = 25 °C, IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 5
Diode forward voltage VF 1.35 V IF = 21.5 A, Tvj = 175 °C 5
Diode reverse recovery time trr 98 ns VR = 400 V, Tvj = 25 °C, IF = 35 A, -diF/dt = 1870 A/µs 5
Diode reverse recovery charge Qrr 2.8 µC VR = 400 V, Tvj = 25 °C, IF = 35 A, -diF/dt = 1870 A/µs 6
Diode peak reverse recovery current Irrm 40.3 A VR = 400 V, Tvj = 25 °C, IF = 35 A, -diF/dt = 1870 A/µs 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts silver TO-247 HCC, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 2 1

CAD (KiCad official)

  • Symbol: IKWH70N65WR6
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikwh70n65wr6-etched.step / ikwh70n65wr6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikwh70n65wr6.step / ikwh70n65wr6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 6e525ed95570404a, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF