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IKWH50N67PR7XKSA1

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKWH50N67PR7XKSA1

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKWH50N67PR7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive voltage is limited to ±20 V continuous (±30 V transient for tp ≤ 0.5 µs), with a typical threshold of 3.95 V (3.2 to 4.8 V).
2 C passive Collector (with the integrated reverse-conducting diode cathode); rated at VCE 670 V and 50 A, with 105 A DC at Tc = 25 °C and 65 A at Tc = 100 °C.
3 E passive Emitter (with the integrated reverse-conducting diode anode); the datasheet gives an internal emitter inductance of 13 nH measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 670 V Tvj ≥ 25 °C 3
DC collector current IC 105 A Tc = 25 °C 3
DC collector current IC 65 A Tc = 100 °C 3
Pulsed collector current ICpulse 150 A tp limited by Tvjmax 3
Turn-off safe operating area 150 A VCE ≤ 670 V, Tvj ≤ 175 °C 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤ 0.5 µs, D < 0.001 3
Power dissipation Ptot 246 W Tc = 25 °C 3
Power dissipation Ptot 123 W Tc = 100 °C 3
Repetitive peak reverse voltage VRRM 670 V Tvj ≥ 25 °C 5
Diode pulsed current IFpulse 5 A tp limited by Tvjmax 5
Storage temperature Tstg -55 150 °C 3
Soldering temperature Tsold 260 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 3
Mounting torque M 0.6 Nm M3 screw, Maximum of mounting processes: 3 3
Operating junction temperature (IGBT) Tvj -40 175 °C 5
Operating junction temperature (diode) Tvj -40 175 °C 5
Thermal resistance, junction-ambient Rth(j-a) 40 K/W 3
IGBT thermal resistance, junction-case Rth(j-c) 0.61 0.79 K/W 3
Collector-emitter saturation voltage VCEsat 1.4 1.75 V IC = 50 A, VGE = 15 V, Tvj = 25 °C 3
Gate-emitter threshold voltage VGEth 3.2 3.95 4.8 V IC = 0.285 mA, VCE = VGE 4
Zero gate-voltage collector current ICES 40 mA VCE = 670 V, VGE = 0 V, Tvj = 25 °C 4
Zero gate-voltage collector current ICES 0.5 mA VCE = 670 V, VGE = 0 V, Tvj = 175 °C 4
Gate-emitter leakage current IGES 100 nA VCE = 0 V, VGE = 20 V 4
Collector-emitter saturation voltage VCEsat 1.7 V IC = 50 A, VGE = 15 V, Tvj = 175 °C 3
Internal emitter inductance LE 13 nH measured 5 mm (0.197 in.) from case 3
Transconductance gfs 77.6 S IC = 50 A, VCE = 20 V 4
Input capacitance Cies 2846 pF VCE = 25 V, VGE = 0 V, f = 100 kHz 4
Output capacitance Coes 36.4 pF VCE = 25 V, VGE = 0 V, f = 100 kHz 4
Reverse transfer capacitance Cres 14.2 pF VCE = 25 V, VGE = 0 V, f = 100 kHz 4
Gate charge QG 127 nC VCC = 520 V, IC = 50 A, VGE = 15 V 4
Turn-on delay time td(on) 18 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 4
Rise time tr 19 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 4
Turn-off delay time td(off) 182 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 4
Fall time tf 32 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 4
Turn-on energy Eon 0.98 mJ VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 4
Turn-off energy Eoff 0.56 mJ VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 4
Total switching energy Ets 1.54 mJ VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 25 °C, IC = 50 A 5
Rise time tr 17 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 175 °C, IC = 50 A 4
Turn-off delay time td(off) 206 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 175 °C, IC = 50 A 4
Fall time tf 46 ns VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 175 °C, IC = 50 A 4
Turn-on energy Eon 1.57 mJ VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 175 °C, IC = 50 A 4
Turn-off energy Eoff 0.81 mJ VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 175 °C, IC = 50 A 4
Total switching energy Ets 2.38 mJ VCC = 400 V, VGE = 0/15 V, RG(on) = 9.8 Ω, RG(off) = 9.8 Ω, Tvj = 175 °C, IC = 50 A 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts silver TO-247 HCC, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 2 1

CAD (KiCad official)

  • Symbol: IKWH50N67PR7XKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikwh50n67pr7xksa1-etched.step / ikwh50n67pr7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikwh50n67pr7xksa1.step / ikwh50n67pr7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 9e9637f59dca96ee, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF