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IKW75N65ES5

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikw75n65es5
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ikw75n65es5: specified limits as data (metadata.characteristics, 56 rows from the datasheet)

Ray ·e933e2b295 ·23d ago ·parent 0c3d0ed
2 files changed +742
README.md+63page.json+679
README.md+63
@@ -27,6 +27,69 @@ Same part, different packaging or reel option.  - `IKW75N65ES5` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-emitter breakdown voltage | V(BR)CES | 650 |  |  | V | VGE=0V, IC=0.20mA | 5 |+| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.75mA, VCE=VGE | 5 |+| Collector-emitter saturation voltage | VCEsat |  | 1.42 | 1.75 | V | VGE=15.0V, IC=75.0A, Tvj=25°C | 5 |+| Diode forward voltage | VF |  | 1.5 | 1.75 | V | VGE=0V, IF=75.0A, Tvj=25°C | 5 |+| Zero gate voltage collector current | ICES |  |  | 3000 | µA | VCE=650V, VGE=0V, Tvj=25°C | 5 |+| Zero gate voltage collector current | ICES |  |  | 50 | µA | VCE=650V, VGE=0V, Tvj=175°C | 5 |+| Gate-emitter leakage current | IGES |  |  | 100 | nA | VCE=0V, VGE=20V | 5 |+| Collector-emitter voltage | VCE |  |  | 650 | V | Tvj ≥25°C | 4 |+| DC collector current | IC |  |  | 80 | A | TC=25°C, limited by Tvjmax | 4 |+| Pulsed collector current | ICpuls |  |  | 300 | A | tp limited by Tvjmax | 4 |+| Turn off safe operating area current |  |  |  | 300 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 4 |+| Diode forward current | IF |  |  | 80 | A | TC=25°C, limited by Tvjmax | 4 |+| Diode pulsed current | IFpuls |  |  | 300 | A | tp limited by Tvjmax | 4 |+| Gate-emitter voltage (static) | VGE | -20 |  | 20 | V |  | 4 |+| Transient gate-emitter voltage | VGE | -30 |  | 30 | V | tp ≤10µs, D<0.010 | 4 |+| Power dissipation | Ptot |  |  | 395 | W | TC=25°C | 4 |+| Power dissipation | Ptot |  |  | 197 | W | TC=100°C | 4 |+| Operating junction temperature | Tvj | -40 |  | 175 | °C |  | 4 |+| Storage temperature | Tstg | -55 |  | 150 | °C |  | 4 |+| Soldering temperature |  |  |  | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 |+| Mounting torque | M |  |  | 0.6 | Nm | M3 screw; maximum of 3 mounting processes | 4 |+| IGBT thermal resistance, junction-case | Rth(j-c) |  |  | 0.38 | K/W |  | 4 |+| Diode thermal resistance, junction-case | Rth(j-c) |  |  | 0.46 | K/W |  | 4 |+| Thermal resistance, junction-ambient | Rth(j-a) |  |  | 40 | K/W |  | 4 |+| Collector-emitter saturation voltage | VCEsat |  | 1.55 |  | V | VGE=15.0V, IC=75.0A, Tvj=125°C | 5 |+| Collector-emitter saturation voltage | VCEsat |  | 1.65 |  | V | VGE=15.0V, IC=75.0A, Tvj=175°C | 5 |+| Diode forward voltage | VF |  | 1.48 |  | V | VGE=0V, IF=75.0A, Tvj=125°C | 5 |+| Diode forward voltage | VF |  | 1.45 |  | V | VGE=0V, IF=75.0A, Tvj=175°C | 5 |+| Transconductance | gfs |  | 100 |  | S | VCE=20V, IC=75.0A | 5 |+| Input capacitance | Cies |  | 4500 |  | pF | VCE=25V, VGE=0V, f=1MHz | 5 |+| Output capacitance | Coes |  | 130 |  | pF | VCE=25V, VGE=0V, f=1MHz | 5 |+| Reverse transfer capacitance | Cres |  | 17 |  | pF | VCE=25V, VGE=0V, f=1MHz | 5 |+| Gate charge | QG |  | 164 |  | nC | VCC=520V, IC=75.0A, VGE=15V | 5 |+| Internal emitter inductance | LE |  | 13 |  | nH | measured 5mm (0.197 in.) from case | 5 |+| Turn-on delay time | td(on) |  | 40 |  | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Rise time | tr |  | 46 |  | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Turn-off delay time | td(off) |  | 144 |  | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Fall time | tf |  | 41 |  | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Turn-on energy | Eon |  | 2.4 |  | mJ | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Turn-off energy | Eoff |  | 0.95 |  | mJ | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Total switching energy | Ets |  | 3.35 |  | mJ | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 |+| Diode reverse recovery time | trr |  | 85 |  | ns | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 |+| Diode reverse recovery charge | Qrr |  | 1.8 |  | µC | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 |+| Diode peak reverse recovery current | Irrm |  | 31 |  | A | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 |+| Diode peak rate of fall of reverse recovery current | dirr/dt |  | -2170 |  | A/µs | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 |+| Turn-on delay time | td(on) |  | 38 |  | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Rise time | tr |  | 56 |  | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Turn-off delay time | td(off) |  | 170 |  | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Fall time | tf |  | 63 |  | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Turn-on energy | Eon |  | 3.45 |  | mJ | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Turn-off energy | Eoff |  | 1.47 |  | mJ | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Total switching energy | Ets |  | 4.92 |  | mJ | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 |+| Diode reverse recovery time | trr |  | 140 |  | ns | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 |+| Diode reverse recovery charge | Qrr |  | 4.05 |  | µC | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 |+| Diode peak reverse recovery current | Irrm |  | 44.5 |  | A | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 |+| Diode peak rate of fall of reverse recovery current | dirr/dt |  | -2220 |  | A/µs | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 |+ ## CAD (KiCad official)  - Symbol: `IKW75N65ES5`
page.json+679
@@ -116,6 +116,685 @@       "Package": "TO-247-3",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "f4fff20da0ebefc8",+      "rows": [+        {+          "name": "Collector-emitter breakdown voltage",+          "symbol": "V(BR)CES",+          "kind": "electrical",+          "unit": "V",+          "min": 650,+          "typ": null,+          "max": null,+          "conditions": "VGE=0V, IC=0.20mA",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Gate-emitter threshold voltage",+          "symbol": "VGE(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 3.2,+          "typ": 4,+          "max": 4.8,+          "conditions": "IC=0.75mA, VCE=VGE",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter saturation voltage",+          "symbol": "VCEsat",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.42,+          "max": 1.75,+          "conditions": "VGE=15.0V, IC=75.0A, Tvj=25°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Diode forward voltage",+          "symbol": "VF",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.5,+          "max": 1.75,+          "conditions": "VGE=0V, IF=75.0A, Tvj=25°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage collector current",+          "symbol": "ICES",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 3000,+          "conditions": "VCE=650V, VGE=0V, Tvj=25°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage collector current",+          "symbol": "ICES",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VCE=650V, VGE=0V, Tvj=175°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Gate-emitter leakage current",+          "symbol": "IGES",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VCE=0V, VGE=20V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter voltage",+          "symbol": "VCE",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 650,+          "conditions": "Tvj ≥25°C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "DC collector current",+          "symbol": "IC",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "TC=25°C, limited by Tvjmax",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Pulsed collector current",+          "symbol": "ICpuls",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "tp limited by Tvjmax",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Turn off safe operating area current",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "VCE ≤650V, Tvj ≤175°C, tp=1µs",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Diode forward current",+          "symbol": "IF",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "TC=25°C, limited by Tvjmax",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Diode pulsed current",+          "symbol": "IFpuls",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "tp limited by Tvjmax",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate-emitter voltage (static)",+          "symbol": "VGE",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Transient gate-emitter voltage",+          "symbol": "VGE",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "tp ≤10µs, D<0.010",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 395,+          "conditions": "TC=25°C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 197,+          "conditions": "TC=100°C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature",+          "symbol": "Tvj",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -40,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Soldering temperature",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 260,+          "conditions": "wave soldering 1.6mm (0.063in.) from case for 10s",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Mounting torque",+          "symbol": "M",+          "kind": "absolute_maximum",+          "unit": "Nm",+          "min": null,+          "typ": null,+          "max": 0.6,+          "conditions": "M3 screw; maximum of 3 mounting processes",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "IGBT thermal resistance, junction-case",+          "symbol": "Rth(j-c)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": null,+          "max": 0.38,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Diode thermal resistance, junction-case",+          "symbol": "Rth(j-c)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": null,+          "max": 0.46,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance, junction-ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter saturation voltage",+          "symbol": "VCEsat",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.55,+          "max": null,+          "conditions": "VGE=15.0V, IC=75.0A, Tvj=125°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Collector-emitter saturation voltage",+          "symbol": "VCEsat",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.65,+          "max": null,+          "conditions": "VGE=15.0V, IC=75.0A, Tvj=175°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Diode forward voltage",+          "symbol": "VF",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.48,+          "max": null,+          "conditions": "VGE=0V, IF=75.0A, Tvj=125°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Diode forward voltage",+          "symbol": "VF",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.45,+          "max": null,+          "conditions": "VGE=0V, IF=75.0A, Tvj=175°C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Transconductance",+          "symbol": "gfs",+          "kind": "electrical",+          "unit": "S",+          "min": null,+          "typ": 100,+          "max": null,+          "conditions": "VCE=20V, IC=75.0A",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Input capacitance",+          "symbol": "Cies",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 4500,+          "max": null,+          "conditions": "VCE=25V, VGE=0V, f=1MHz",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Output capacitance",+          "symbol": "Coes",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 130,+          "max": null,+          "conditions": "VCE=25V, VGE=0V, f=1MHz",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse transfer capacitance",+          "symbol": "Cres",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 17,+          "max": null,+          "conditions": "VCE=25V, VGE=0V, f=1MHz",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Gate charge",+          "symbol": "QG",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 164,+          "max": null,+          "conditions": "VCC=520V, IC=75.0A, VGE=15V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Internal emitter inductance",+          "symbol": "LE",+          "kind": "electrical",+          "unit": "nH",+          "min": null,+          "typ": 13,+          "max": null,+          "conditions": "measured 5mm (0.197 in.) from case",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Turn-on delay time",+          "symbol": "td(on)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 40,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Rise time",+          "symbol": "tr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 46,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Turn-off delay time",+          "symbol": "td(off)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 144,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Fall time",+          "symbol": "tf",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 41,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Turn-on energy",+          "symbol": "Eon",+          "kind": "electrical",+          "unit": "mJ",+          "min": null,+          "typ": 2.4,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Turn-off energy",+          "symbol": "Eoff",+          "kind": "electrical",+          "unit": "mJ",+          "min": null,+          "typ": 0.95,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Total switching energy",+          "symbol": "Ets",+          "kind": "electrical",+          "unit": "mJ",+          "min": null,+          "typ": 3.35,+          "max": null,+          "conditions": "Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Diode reverse recovery time",+          "symbol": "trr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 85,+          "max": null,+          "conditions": "Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Diode reverse recovery charge",+          "symbol": "Qrr",+          "kind": "electrical",+          "unit": "µC",+          "min": null,+          "typ": 1.8,+          "max": null,+          "conditions": "Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Diode peak reverse recovery current",+          "symbol": 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"source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Rise time",+          "symbol": "tr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 56,+          "max": null,+          "conditions": "Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Turn-off delay time",+          "symbol": "td(off)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 170,+          "max": null,+          "conditions": "Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Fall time",+          "symbol": "tf",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 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IF=75.0A, diF/dt=1020A/µs",+          "source_page": 7,+          "source": "datasheet"+        },+        {+          "name": "Diode peak reverse recovery current",+          "symbol": "Irrm",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": 44.5,+          "max": null,+          "conditions": "Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs",+          "source_page": 7,+          "source": "datasheet"+        },+        {+          "name": "Diode peak rate of fall of reverse recovery current",+          "symbol": "dirr/dt",+          "kind": "electrical",+          "unit": "A/µs",+          "min": null,+          "typ": -2220,+          "max": null,+          "conditions": "Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs",+          "source_page": 7,+          "source": "datasheet"+        }+      ]     }   },   "variants": [