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ikw75n65es5: factory component page (tier=lcsc)

Ray ·a0cc39031f ·2mo ago ·parent b6be897
1 file changed +92−8
page.json+92−8
@@ -1,13 +1,102 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "ikw75n65es5",+  "title": "IKW75N65ES5",+  "brief": "Infineon Technologies IGBT Transistors / Modules, TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Infineon Technologies IGBT Transistors / Modules, TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "ikw75n65es5"   ],+  "component": {+    "mpn": "IKW75N65ES5",+    "manufacturer": "Infineon Technologies",+    "package": "TO-247-3",+    "pin_count": 3,+    "category": "Transistors/Thyristors",+    "subcategory": "IGBT Transistors / Modules",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894848468865024",+    "parts": {+      "symbol": "ikw75n65es5.kicad_sym",+      "footprint": "ikw75n65es5.kicad_mod",+      "model_3d": "ikw75n65es5.glb",+      "model_3d_step": "ikw75n65es5.step",+      "lbr": "ikw75n65es5.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Insulated gate control terminal. V_GE(th) 3.2..4.8V (typ 4.0V). Max V_GE = \u00b120V DC (\u00b130V transient, t_p \u226410\u00b5s, D<0.010). Typical drive voltage 15V; gate charge Q_G \u2248 164nC at V_CC=520V, I_C=75A."+      },+      {+        "number": "2",+        "name": "C",+        "type": "passive",+        "description": "Collector, also connected to the package backside (metal tab). V_CE breakdown 650V min; DC I_C = 80A (limited by bondwire) at T_C=25\u00b0C; pulsed I_Cpuls = 300A. Antiparallel RAPID 1 diode's cathode is internally connected to this pin."+      },+      {+        "number": "3",+        "name": "E",+        "type": "passive",+        "description": "Emitter. IGBT emitter and anode of the copacked antiparallel RAPID 1 diode. Internal emitter inductance L_E \u2248 13nH measured 5mm from case."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894848468865024",+        "pages": 16,+        "sha256": "f4fff20da0ebefc8",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "Infineon Technologies",+      "Package": "TO-247-3",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    }+  },+  "variants": [+    {+      "mpn": "IKW75N65ES5",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "ikw75n65es5"+  ],+  "discovery_pitch": "IKW75N65ES5 (Infineon Technologies) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +114,5 @@     "docs/ikw75n65es5-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file