component
IKW75N65ES5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated gate control terminal. V_GE(th) 3.2..4.8V (typ 4.0V). Max V_GE = \u00b120V DC (\u00b130V transient, t_p \u226410\u00b5s, D<0.010). Typical drive voltage 15V; gate charge Q_G \u2248 164nC at V_CC=520V, I_C=75A."+ "description": "Gate. Insulated gate control terminal. V_GE(th) 3.2..4.8V (typ 4.0V). Max V_GE = ±20V DC (±30V transient, t_p ≤10µs, D<0.010). Typical drive voltage 15V; gate charge Q_G ≈ 164nC at V_CC=520V, I_C=75A." }, { "number": "2", "name": "C", "type": "passive",- "description": "Collector, also connected to the package backside (metal tab). V_CE breakdown 650V min; DC I_C = 80A (limited by bondwire) at T_C=25\u00b0C; pulsed I_Cpuls = 300A. Antiparallel RAPID 1 diode's cathode is internally connected to this pin."+ "description": "Collector, also connected to the package backside (metal tab). V_CE breakdown 650V min; DC I_C = 80A (limited by bondwire) at T_C=25°C; pulsed I_Cpuls = 300A. Antiparallel RAPID 1 diode's cathode is internally connected to this pin." }, { "number": "3", "name": "E", "type": "passive",- "description": "Emitter. IGBT emitter and anode of the copacked antiparallel RAPID 1 diode. Internal emitter inductance L_E \u2248 13nH measured 5mm from case."+ "description": "Emitter. IGBT emitter and anode of the copacked antiparallel RAPID 1 diode. Internal emitter inductance L_E ≈ 13nH measured 5mm from case." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/ikw75n65es5-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }