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IKW75N60T

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKW75N60T

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW75N60T from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage limited to ±20 V, with a typical threshold VGE(th) of 4.9 V (4.1 to 5.7 V) at IC=1.2 mA.
2 C passive Collector, also connected to the package tab; collector-emitter voltage is 600 V, with DC collector current of 75 A at TC=100°C.
3 E passive Emitter, which is also the anode of the anti-parallel diode; diode forward current is 75 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tj >= 25C 1
DC collector current IC 75 A TC = 100C 1
Pulsed collector current ICpuls 225 A tp limited by Tjmax 1
Turn off safe operating area current 225 A VCE = 600V, Tj = 175C, tp = 1us 1
Diode forward current IF 75 A TC = 100C 1
Diode pulsed current IFpuls 225 A tp limited by Tjmax 1
Gate-emitter voltage VGE 20 V 1
Short circuit withstand time tSC 5 s VGE = 15V, VCC <= 400V, Tj <= 150C; allowed number of short circuits <1000, time between short circuits >1s 1
Power dissipation Ptot 428 W TC = 25C 1
Operating junction temperature Tj -40 175 C 1
Storage temperature Tstg -55 150 C 1
Soldering temperature Tsold 260 C 1.6mm (0.063 in.) from case for 10s 1
IGBT thermal resistance, junction-case RthJC 0.35 K/W 2
Diode thermal resistance, junction-case RthJCD 0.6 K/W 2
Thermal resistance, junction-ambient RthJA 40 K/W 2
Collector-emitter breakdown voltage V(BR)CES 600 V VGE=0V, IC=0.2mA 2
Zero gate voltage collector current ICES 40 uA VCE=600V, VGE=0V, Tj=25C 2
Zero gate voltage collector current ICES 5000 uA VCE=600V, VGE=0V, Tj=175C 2
Gate-emitter threshold voltage VGE(th) 4.1 4.9 5.7 V IC=1.2mA, VCE=VGE 2
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 2
Transconductance gfs 41 S VCE=20V, IC=75A 2
Input capacitance Ciss 4620 pF VCE=25V, VGE=0V, f=1MHz 2
Output capacitance Coss 288 pF VCE=25V, VGE=0V, f=1MHz 2
Reverse transfer capacitance Crss 137 pF VCE=25V, VGE=0V, f=1MHz 2
Gate charge QGate 470 nC VCC=480V, IC=75A, VGE=15V 2
Internal emitter inductance LE 13 nH measured 5mm (0.197 in.) from case 2
Short circuit collector current IC(SC) 690 A VGE=15V, tSC<=5s, VCC=400V, Tj<=150C 2
Turn-on delay time td(on) 33 ns Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Rise time tr 36 ns Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Turn-off delay time td(off) 330 ns Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Fall time tf 35 ns Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Turn-on energy Eon 2 mJ Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Turn-off energy Eoff 2.5 mJ Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Total switching energy Ets 4.5 mJ Tj=25C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Diode reverse recovery time trr 121 ns Tj=25C, VR=400V, IF=75A, diF/dt=1460A/s 3
Diode reverse recovery charge Qrr 2.4 uC Tj=25C, VR=400V, IF=75A, diF/dt=1460A/s 3
Diode peak reverse recovery current Irrm 38.5 A Tj=25C, VR=400V, IF=75A, diF/dt=1460A/s 3
Diode peak rate of fall of reverse recovery current dirr/dt 921 A/s Tj=25C, VR=400V, IF=75A, diF/dt=1460A/s 3
Turn-on delay time td(on) 32 ns Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Rise time tr 37 ns Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Turn-off delay time td(off) 363 ns Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Fall time tf 38 ns Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Turn-on energy Eon 2.9 mJ Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Turn-off energy Eoff 2.9 mJ Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Total switching energy Ets 5.8 mJ Tj=175C, VCC=400V, IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF 3
Diode reverse recovery time trr 182 ns Tj=175C, VR=400V, IF=75A, diF/dt=1460A/s 3
Diode reverse recovery charge Qrr 5.8 uC Tj=175C, VR=400V, IF=75A, diF/dt=1460A/s 3
Diode peak reverse recovery current Irrm 56.2 A Tj=175C, VR=400V, IF=75A, diF/dt=1460A/s 3
Diode peak rate of fall of reverse recovery current dirr/dt 1013 A/s Tj=175C, VR=400V, IF=75A, diF/dt=1460A/s 3

CAD (KiCad official)

  • Symbol: IKW75N60T
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw75n60t-etched.step / ikw75n60t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw75n60t.step / ikw75n60t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 56f2a0cc6324766b, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF