component

IKW75N60H3

Public Made by Adom

by adom

Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikw75n60h3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs ikw75n60h3: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers ikw75n60h3: viewers · Ray 1mo ago
ikw75n60h3-etched.fit.json ikw75n60h3: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ikw75n60h3-etched.glb ikw75n60h3: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ikw75n60h3-etched.step ikw75n60h3: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ikw75n60h3.glb Publish 0.1.0 · Ray 1mo ago
ikw75n60h3.kicad_mod Publish 0.1.0 · Ray 1mo ago
ikw75n60h3.kicad_sym Publish 0.1.0 · Ray 1mo ago
ikw75n60h3.lbr Publish 0.1.0 · Ray 1mo ago
ikw75n60h3.step Publish 0.1.0 · Ray 1mo ago
package.json ikw75n60h3: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json ikw75n60h3: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 23d ago
README.md ikw75n60h3: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 23d ago

IKW75N60H3

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW75N60H3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input with maximum ±20V gate-emitter voltage and threshold voltage of 4.1-5.7V at Tvj=25°C
2 Collector passive Collector terminal rated for 600V maximum collector-emitter voltage and 75-80A DC current at case temperature 25-100°C; backside mounting tab also connected to collector
3 Emitter passive Emitter terminal serving as gate voltage reference and main current return path

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CES 600 V VGE = 0V, IC = 2.00mA 5
Gate-emitter threshold voltage VGE(th) 4.1 5.1 5.7 V IC = 1.20mA, VCE = VGE 5
Zero gate voltage collector current ICES 40 µA Tvj = 25°C, VCE = 600V, VGE = 0V 5
Zero gate voltage collector current ICES 5000 µA Tvj = 175°C, VCE = 600V, VGE = 0V 5
Gate-emitter leakage current IGES 100 nA VCE = 0V, VGE = 20V 5
Collector-emitter saturation voltage VCE(sat) 1.85 2.3 V VGE = 15.0V, IC = 75.0A, Tvj = 25°C 5
Diode forward voltage VF 1.65 2 V VGE = 0V, IF = 50.0A, Tvj = 25°C 5
Collector-emitter voltage VCE 600 V 4
DC collector current IC 80 A Tc = 25°C, limited by Tvj max 4
DC collector current IC 75 A Tc = 100°C, limited by Tvj max 4
Pulsed collector current ICpuls 225 A tp limited by Tvj max 4
Turn off safe operating area 225 A VCE ≤ 600V, Tvj ≤ 175°C 4
Diode forward current IF 80 A Tc = 25°C, limited by Tvj max 4
Diode forward current IF 50 A Tc = 100°C, limited by Tvj max 4
Diode pulsed current IFpuls 150 A tp limited by Tvj max 4
Gate-emitter voltage VGE -20 20 V 4
Short circuit withstand time tSC 5 µs VGE = 15.0V, VCC ≤ 400V, Tvj = 150°C, <1000 short circuits, ≥1.0s between short circuits 4
Power dissipation Ptot 428 W Tc = 25°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature, wave soldering 260 °C 1.6 mm (0.063 in.) from case for 10s 4
Mounting torque, M3 screw M 0.6 Nm Maximum of mounting processes: 3 4
IGBT thermal resistance, junction-case Rth(j-c) 0.35 K/W IGBT 4
Diode thermal resistance, junction-case Rth(j-c) 0.8 K/W Diode 4
Thermal resistance junction-ambient Rth(j-a) 40 K/W 4

CAD (KiCad official)

  • Symbol: IKW75N60H3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw75n60h3-etched.step / ikw75n60h3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw75n60h3.step / ikw75n60h3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 e56360b17cbfd034, retrieved 2026-09-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF