component
IKW75N60H3
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ikw75n60h3: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+339
README.md+32@@ -21,6 +21,38 @@ IKW75N60H3 from Infineon Technologies, in a TO-247-3. Pinout and pin description | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-emitter breakdown voltage | V(BR)CES | 600 | | | V | VGE = 0V, IC = 2.00mA | 5 |+| Gate-emitter threshold voltage | VGE(th) | 4.1 | 5.1 | 5.7 | V | IC = 1.20mA, VCE = VGE | 5 |+| Zero gate voltage collector current | ICES | | | 40 | µA | Tvj = 25°C, VCE = 600V, VGE = 0V | 5 |+| Zero gate voltage collector current | ICES | | | 5000 | µA | Tvj = 175°C, VCE = 600V, VGE = 0V | 5 |+| Gate-emitter leakage current | IGES | | | 100 | nA | VCE = 0V, VGE = 20V | 5 |+| Collector-emitter saturation voltage | VCE(sat) | | 1.85 | 2.3 | V | VGE = 15.0V, IC = 75.0A, Tvj = 25°C | 5 |+| Diode forward voltage | VF | | 1.65 | 2 | V | VGE = 0V, IF = 50.0A, Tvj = 25°C | 5 |+| Collector-emitter voltage | VCE | | | 600 | V | | 4 |+| DC collector current | IC | | | 80 | A | Tc = 25°C, limited by Tvj max | 4 |+| DC collector current | IC | | | 75 | A | Tc = 100°C, limited by Tvj max | 4 |+| Pulsed collector current | ICpuls | | | 225 | A | tp limited by Tvj max | 4 |+| Turn off safe operating area | | | | 225 | A | VCE ≤ 600V, Tvj ≤ 175°C | 4 |+| Diode forward current | IF | | | 80 | A | Tc = 25°C, limited by Tvj max | 4 |+| Diode forward current | IF | | | 50 | A | Tc = 100°C, limited by Tvj max | 4 |+| Diode pulsed current | IFpuls | | | 150 | A | tp limited by Tvj max | 4 |+| Gate-emitter voltage | VGE | -20 | | 20 | V | | 4 |+| Short circuit withstand time | tSC | | | 5 | µs | VGE = 15.0V, VCC ≤ 400V, Tvj = 150°C, <1000 short circuits, ≥1.0s between short circuits | 4 |+| Power dissipation | Ptot | | | 428 | W | Tc = 25°C | 4 |+| Operating junction temperature | Tvj | -40 | | 175 | °C | | 4 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 4 |+| Soldering temperature, wave soldering | | | | 260 | °C | 1.6 mm (0.063 in.) from case for 10s | 4 |+| Mounting torque, M3 screw | M | | | 0.6 | Nm | Maximum of mounting processes: 3 | 4 |+| IGBT thermal resistance, junction-case | Rth(j-c) | | | 0.35 | K/W | IGBT | 4 |+| Diode thermal resistance, junction-case | Rth(j-c) | | | 0.8 | K/W | Diode | 4 |+| Thermal resistance junction-ambient | Rth(j-a) | | | 40 | K/W | | 4 |+ ## CAD (KiCad official) - Symbol: `IKW75N60H3`
page.json+307@@ -133,6 +133,313 @@ "Package": "TO-247-3", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e56360b17cbfd034",+ "rows": [+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "VGE = 0V, IC = 2.00mA",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter threshold voltage",+ "symbol": "VGE(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 4.1,+ "typ": 5.1,+ "max": 5.7,+ "conditions": "IC = 1.20mA, VCE = VGE",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage collector current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Tvj = 25°C, VCE = 600V, VGE = 0V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage collector current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5000,+ "conditions": "Tvj = 175°C, VCE = 600V, VGE = 0V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter leakage current",+ "symbol": "IGES",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCE = 0V, VGE = 20V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.85,+ "max": 2.3,+ "conditions": "VGE = 15.0V, IC = 75.0A, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.65,+ "max": 2,+ "conditions": "VGE = 0V, IF = 50.0A, Tvj = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "DC collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Tc = 25°C, limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "DC collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "Tc = 100°C, limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Pulsed collector current",+ "symbol": "ICpuls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "tp limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn off safe operating area",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "VCE ≤ 600V, Tvj ≤ 175°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode forward current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Tc = 25°C, limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode forward current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Tc = 100°C, limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode pulsed current",+ "symbol": "IFpuls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "tp limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter voltage",+ "symbol": "VGE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Short circuit withstand time",+ "symbol": "tSC",+ "kind": "absolute_maximum",+ "unit": "µs",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VGE = 15.0V, VCC ≤ 400V, Tvj = 150°C, <1000 short circuits, ≥1.0s between short circuits",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 428,+ "conditions": "Tc = 25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "Tvj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Soldering temperature, wave soldering",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1.6 mm (0.063 in.) from case for 10s",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Mounting torque, M3 screw",+ "symbol": "M",+ "kind": "absolute_maximum",+ "unit": "Nm",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "Maximum of mounting processes: 3",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "IGBT thermal resistance, junction-case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.35,+ "conditions": "IGBT",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode thermal resistance, junction-case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "Diode",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],