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Contents

README

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IKW50N65WR5

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW50N65WR5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; VGE = ±20 V absolute maximum, VGE(th) = 3.2-4.8 V, QG = 230 nC typical (VCC=520 V, IC=50 A, VGE=15 V).
2 C passive Collector (also diode cathode for monolithic body diode); VCE = 650 V max, IC = 50 A (TC=130 °C), VCEsat = 1.40 V typ at VGE=15 V, IC=50 A, Tvj=25 °C; tab is electrically connected to collector.
3 E passive Emitter (also diode anode for monolithic body diode); current return path; internal emitter inductance LE = 13 nH typical measured 5 mm from case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IKW50N65WR5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw50n65wr5-etched.step / ikw50n65wr5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw50n65wr5.step / ikw50n65wr5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 0e6f6bc2d6da8f12, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-4-6 (text+vision), consensus claude-opus-4-7 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF