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Contents

README

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IKW50N65H5

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW50N65H5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal for control signals, rated ±20V gate-emitter voltage (±30V transient peak), with gate-emitter threshold voltage 3.2-4.8V at IC=0.5mA
2 C power_in Collector main power terminal rated 650V maximum collector-emitter voltage (V(BR)CES), 80A maximum DC collector current at 25°C case temperature
3 E power_out Emitter power return terminal complementary to Collector, conducting up to 80A DC at 25°C case temperature, with typical saturation voltage 1.65V at IC=50A

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IKW50N65H5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw50n65h5-etched.step / ikw50n65h5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw50n65h5.step / ikw50n65h5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 b6f591ca1e84309b, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF