component
IKW50N65EH5
Public Made by Adomby adom
Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownIKW50N65EH5
Infineon Technologies · IGBTs · TO-247-3
IKW50N65EH5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated ±20 V (±30 V transient, tp ≤10 µs, D<0.010) with threshold VGE(th) 3.2 to 4.8 V. |
| 2 | C | passive | Collector (also the backside tab); collector-emitter voltage is rated 650 V with DC collector current of 50 A at TC=100°C. |
| 3 | E | passive | Emitter; IGBT emitter and anode of the co-packed antiparallel diode, with internal emitter inductance LE of 13 nH typ. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥25°C | 3 | ||
| DC collector current | IC | 80 | A | TC=25°C value limited by bondwire | 3 | ||
| DC collector current | IC | 50 | A | TC=100°C | 3 | ||
| Pulsed collector current | ICpuls | 200 | A | tp limited by Tvjmax | 3 | ||
| Turn off safe operating area | 200 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 3 | |||
| Diode forward current | IF | 80 | A | TC=25°C value limited by bondwire | 3 | ||
| Diode forward current | IF | 50 | A | TC=100°C | 3 | ||
| Diode pulsed current | IFpuls | 200 | A | tp limited by Tvjmax | 3 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp ≤10µs, D<0.010 | 3 | |
| Power dissipation | Ptot | 275 | W | TC=25°C | 3 | ||
| Power dissipation | Ptot | 138 | W | TC=100°C | 3 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 3 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw, PG-TO247-pin123, max 3 mounting processes | 3 | ||
| IGBT thermal resistance, junction-case | Rth(j-C) | 0.55 | K/W | 3 | |||
| Diode thermal resistance, junction-case | Rth(j-C) | 0.63 | K/W | 3 | |||
| Thermal resistance junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE=0V, IC=0.20mA | 4 | ||
| Collector-emitter saturation voltage | VCEsat | 1.65 | 2.1 | V | VGE=15.0V, IC=50.0A, Tvj=25°C | 4 | |
| Collector-emitter saturation voltage | VCEsat | 1.85 | V | VGE=15.0V, IC=50.0A, Tvj=125°C | 4 | ||
| Collector-emitter saturation voltage | VCEsat | 1.95 | V | VGE=15.0V, IC=50.0A, Tvj=175°C | 4 | ||
| Diode forward voltage | VF | 1.35 | 1.7 | V | VGE=0V, IF=50.0A, Tvj=25°C | 4 | |
| Diode forward voltage | VF | 1.33 | V | VGE=0V, IF=50.0A, Tvj=125°C | 4 | ||
| Diode forward voltage | VF | 1.3 | V | VGE=0V, IF=50.0A, Tvj=175°C | 4 | ||
| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.50mA, VCE=VGE | 4 |
| Zero gate voltage collector current | ICES | 1 | 50 | µA | VCE=650V, VGE=0V, Tvj=25°C | 4 | |
| Zero gate voltage collector current | ICES | 2000 | µA | VCE=650V, VGE=0V, Tvj=175°C | 4 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 4 | ||
| Transconductance | gfs | 62 | S | VCE=20V, IC=50.0A | 4 | ||
| Input capacitance | Cies | 3000 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Output capacitance | Coes | 90 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Cres | 12 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Gate charge | QG | 120 | nC | VCC=520V, IC=50.0A, VGE=15V | 4 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 4 | ||
| Turn-on delay time | td(on) | 25 | ns | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Rise time | tr | 29 | ns | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Turn-off delay time | td(off) | 172 | ns | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Fall time | tf | 35 | ns | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Turn-on energy | Eon | 1.5 | mJ | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Turn-off energy | Eoff | 0.5 | mJ | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Total switching energy | Ets | 2 | mJ | Tvj=25°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 4 | ||
| Turn-on delay time | td(on) | 24 | ns | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Rise time | tr | 30 | ns | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Turn-off delay time | td(off) | 190 | ns | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Fall time | tf | 30 | ns | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Turn-on energy | Eon | 2 | mJ | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Turn-off energy | Eoff | 0.6 | mJ | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Total switching energy | Ets | 2.6 | mJ | Tvj=150°C, VCC=400V, IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω, RG(off)=12.0Ω, Lσ=30nH, Cσ=25pF | 5 | ||
| Diode reverse recovery time | trr | 81 | ns | Tvj=25°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF | 5 | ||
| Diode reverse recovery charge | Qrr | 1.1 | µC | Tvj=25°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF | 5 | ||
| Diode peak reverse recovery current | Irrm | 17 | A | Tvj=25°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF | 5 | ||
| Diode reverse recovery time | trr | 108 | ns | Tvj=150°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF | 6 | ||
| Diode reverse recovery charge | Qrr | 2.6 | µC | Tvj=150°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF | 6 | ||
| Diode peak reverse recovery current | Irrm | 36 | A | Tvj=150°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF | 6 |
CAD (KiCad official)
- Symbol:
IKW50N65EH5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw50n65eh5-etched.step/ikw50n65eh5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw50n65eh5.step/ikw50n65eh5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
e185c36c06c572e9, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).