component

IKW40N65ET7

Public Made by Adom

by adom

Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikw40n65et7factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers ikw40n65et7: viewers · Ray 17d ago
ikw40n65et7-etched.glb Publish 0.1.0 · Ray 17d ago
ikw40n65et7-etched.step ikw40n65et7: factory component page (tier=lcsc) · Ray 17d ago
ikw40n65et7-hero.glb ikw40n65et7: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
ikw40n65et7-hero.overlay.json Publish 0.1.0 · Ray 17d ago
ikw40n65et7.glb Publish 0.1.0 · Ray 17d ago
ikw40n65et7.kicad_mod Publish 0.1.0 · Ray 17d ago
ikw40n65et7.kicad_sym Publish 0.1.0 · Ray 17d ago
ikw40n65et7.lbr Publish 0.1.0 · Ray 17d ago
ikw40n65et7.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

IKW40N65ET7

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW40N65ET7 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, with rated gate-emitter voltage VGE of ±20 V (±30 V transient for tp ≤ 10 µs) and threshold VGEth of 4.30 to 5.70 V at IC = 0.40 mA.
2 C passive Collector (also the backside tab) of the IGBT and cathode of the antiparallel diode, rated for VCE = 650 V and DC collector current of 76 A at TC = 25 °C.
3 E passive Emitter of the IGBT and anode of the antiparallel diode, with internal emitter inductance LE of 13.0 nH measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage temperature Tstg -55 150 °C 3
Collector-emitter voltage VCE 650 V Tvj ≥ 25 °C 3
DC collector current IC 76 A TC = 25 °C 3
DC collector current IC 49.5 A TC = 100 °C 3
Pulsed collector current ICpuls 120 A tp limited by Tvjmax 3
Turn-off safe operating area 120 A VCE ≤ 650 V, tP = 1 µs, Tvj ≤ 175 °C 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤ 10 µs, D < 0.010 3
Short circuit withstand time tSC 5 µs VGE = 15 V, VCC ≤ 330 V, Tvj = 100 °C; allowed short circuits < 1000, time between short circuits ≥ 1.0 s 3
Short circuit withstand time tSC 3 µs VGE = 15 V, VCC ≤ 400 V, Tvj = 150 °C; allowed short circuits < 1000, time between short circuits ≥ 1.0 s 3
Power dissipation Ptot 230.8 W TC = 25 °C 3
Power dissipation Ptot 115.4 W TC = 100 °C 3
Collector-emitter saturation voltage VCEsat 1.35 1.65 V IC = 40.0 A, VGE = 15 V, Tvj = 25 °C 4
Gate-emitter threshold voltage VGEth 4.3 5 5.7 V IC = 0.40 mA, VCE = VGE 4
Operating junction temperature Tvj -40 175 °C 6
Diode forward current IF 72 A limited by bondwire, TC = 25 °C 6
Diode forward current IF 43.5 A limited by bondwire, TC = 100 °C 6
Diode pulsed current IFpuls 120 A limited by Tvjmax 6
Repetitive peak reverse voltage VRRM 650 V Tvj ≥ 25 °C 6
Diode forward voltage VF 1.65 2 V IF = 40.0 A, Tvj = 25 °C 6
Operating junction temperature (diode) Tvj -40 175 °C 8
Internal emitter inductance LE 13 nH measured 5 mm (0.197 in) from case 3
Soldering temperature 260 °C wave soldering, 1.6 mm (0.063 in.) from case, for 10 s 3
Mounting torque, M3 screw M 0.6 Nm maximum of mounting processes: 3 3
Thermal resistance, junction-ambient Rth(j-a) 40 K/W 3
Collector-emitter saturation voltage VCEsat 1.5 V IC = 40.0 A, VGE = 15 V, Tvj = 125 °C 4
Collector-emitter saturation voltage VCEsat 1.6 V IC = 40.0 A, VGE = 15 V, Tvj = 175 °C 4
Zero gate voltage collector current ICES 40 µA VCE = 650 V, VGE = 0 V, Tvj = 25 °C 4
Zero gate voltage collector current ICES 900 µA VCE = 650 V, VGE = 0 V, Tvj = 175 °C 4
Gate-emitter leakage current IGES 100 nA VCE = 0 V, VGE = 20 V 4
Transconductance gfs 21 S IC = 40.0 A, VCE = 20 V 4
Short circuit collector current ISC 205 A VGE = 15 V, tSC ≤ 3 µs, allowed short circuits < 1000, time between short circuits ≥ 1.0 s 4
Input capacitance Cies 2475 pF VCE = 25 V, VGE = 0 V, f = 1000 kHz 4
Output capacitance Coes 77 pF VCE = 25 V, VGE = 0 V, f = 1000 kHz 4
Reverse transfer capacitance Cres 25 pF VCE = 25 V, VGE = 0 V, f = 1000 kHz 4
Gate charge QG 235 nC IC = 40.0 A, VGE = 15 V, VCE = 520 V 4
Turn-on energy Eon 1.05 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 25 °C, IC = 40.0 A 5
Turn-on energy Eon 0.45 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 25 °C, IC = 20.0 A 5
Turn-on energy Eon 1.65 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 175 °C, IC = 40.0 A 5
Turn-on energy Eon 0.84 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 175 °C, IC = 20.0 A 5
Turn-off energy Eoff 0.59 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 25 °C, IC = 40.0 A 5
Turn-off energy Eoff 0.26 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 25 °C, IC = 20.0 A 5
Turn-off energy Eoff 1.13 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 175 °C, IC = 40.0 A 5
Total switching energy Ets 1.64 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 25 °C, IC = 40.0 A 6
Total switching energy Ets 0.71 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 25 °C, IC = 20.0 A 6
Total switching energy Ets 2.78 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 175 °C, IC = 40.0 A 6
Total switching energy Ets 1.43 mJ VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF, Tvj = 175 °C, IC = 20.0 A 6
IGBT thermal resistance, junction-case Rthjc 0.65 K/W 6
Diode forward voltage VF 1.6 V IF = 40.0 A, Tvj = 125 °C 6
Diode forward voltage VF 1.55 V IF = 40.0 A, Tvj = 175 °C 6
Reverse leakage current IR 40 µA VR = 650 V, Tvj = 25 °C 6
Reverse leakage current IR 900 µA VR = 650 V, Tvj = 175 °C 6
Diode thermal resistance, junction-case Rthjc 0.9 K/W 8

CAD (KiCad official)

  • Symbol: IKW40N65ET7
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw40n65et7-etched.step / ikw40n65et7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw40n65et7.step / ikw40n65et7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (19 pp, sha256 414cc9e1cd90c9bd, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF