component
IKW40N65ES5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IKW40N65ES5
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IKW40N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits gate-emitter voltage to ±20 V, with transient gate-emitter voltage up to ±30 V (tp ≤10 µs, D<0.010). |
| 2 | C | passive | Collector, connected to the backside tab; the device is rated for VCE 650 V and DC collector current 79 A at TC=25°C (50 A at TC=100°C). |
| 3 | E | passive | Emitter terminal; the datasheet specifies an internal emitter inductance LE of 13.0 nH measured 5 mm from the case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥25°C | 4 | ||
| DC collector current, limited by Tvjmax | IC | 79 | A | TC=25°C | 4 | ||
| DC collector current, limited by Tvjmax | IC | 50 | A | TC=100°C | 4 | ||
| Pulsed collector current | ICpuls | 160 | A | tp limited by Tvjmax | 4 | ||
| Turn off safe operating area | 160 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 4 | |||
| Diode forward current, limited by Tvjmax | IF | 79 | A | TC=25°C | 4 | ||
| Diode forward current, limited by Tvjmax | IF | 50 | A | TC=100°C | 4 | ||
| Diode pulsed current | IFpuls | 160 | A | tp limited by Tvjmax | 4 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 4 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp ≤10µs, D<0.010 | 4 | |
| Power dissipation | Ptot | 230 | W | TC=25°C | 4 | ||
| Power dissipation | Ptot | 115 | W | TC=100°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 4 | ||
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.65 | K/W | 4 | |||
| Diode thermal resistance, junction - case | Rth(j-c) | 0.75 | K/W | 4 | |||
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | 4 | |||
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE=0V, IC=0.20mA | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 1.35 | 1.7 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 5 | |
| Diode forward voltage | VF | 1.45 | 1.7 | V | VGE=0V, IF=40.0A, Tvj=25°C | 5 | |
| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.40mA, VCE=VGE | 5 |
| Zero gate voltage collector current | ICES | 50 | µA | VCE=650V, VGE=0V, Tvj=25°C | 5 | ||
| Zero gate voltage collector current | ICES | 1700 | µA | VCE=650V, VGE=0V, Tvj=175°C | 5 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 1.5 | V | VGE=15.0V, IC=40.0A, Tvj=125°C | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 1.6 | V | VGE=15.0V, IC=40.0A, Tvj=175°C | 5 | ||
| Diode forward voltage | VF | 1.42 | V | VGE=0V, IF=40.0A, Tvj=125°C | 5 | ||
| Diode forward voltage | VF | 1.39 | V | VGE=0V, IF=40.0A, Tvj=175°C | 5 | ||
| Transconductance | gfs | 45 | S | VCE=20V, IC=40.0A | 5 | ||
| Input capacitance | Cies | 2500 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Output capacitance | Coes | 71 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Reverse transfer capacitance | Cres | 9 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Gate charge | QG | 95 | nC | VCC=520V, IC=40.0A, VGE=15V | 5 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 5 | ||
| Turn-on delay time | td(on) | 19 | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Rise time | tr | 18 | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-off delay time | td(off) | 130 | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Fall time | tf | 23 | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-on energy | Eon | 0.86 | mJ | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-off energy | Eoff | 0.4 | mJ | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Total switching energy | Ets | 1.26 | mJ | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-on delay time | td(on) | 20 | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Rise time | tr | 16 | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Turn-off delay time | td(off) | 156 | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Fall time | tf | 48 | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Turn-on energy | Eon | 1.2 | mJ | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Turn-off energy | Eoff | 0.69 | mJ | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Total switching energy | Ets | 1.89 | mJ | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Reverse recovery time | trr | 73 | ns | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 | ||
| Diode reverse recovery charge | Qrr | 1.1 | µC | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 | ||
| Diode peak reverse recovery current | Irrm | 23 | A | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 | ||
| Diode peak rate of fall of reverse recovery current | dirr/dt | -1500 | A/µs | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 | ||
| Reverse recovery time | trr | 120 | ns | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 | ||
| Diode reverse recovery charge | Qrr | 2.6 | µC | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 | ||
| Diode peak reverse recovery current | Irrm | 36 | A | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 | ||
| Diode peak rate of fall of reverse recovery current | dirr/dt | -1250 | A/µs | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 |
CAD (KiCad official)
- Symbol:
IKW40N65ES5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw40n65es5-etched.step/ikw40n65es5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw40n65es5.step/ikw40n65es5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
8373dab5268d42cf, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IKW40N65ES5
**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3
IKW40N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits gate-emitter voltage to ±20 V, with transient gate-emitter voltage up to ±30 V (tp ≤10 µs, D<0.010). |
| 2 | C | passive | Collector, connected to the backside tab; the device is rated for VCE 650 V and DC collector current 79 A at TC=25°C (50 A at TC=100°C). |
| 3 | E | passive | Emitter terminal; the datasheet specifies an internal emitter inductance LE of 13.0 nH measured 5 mm from the case. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | | | 650 | V | Tvj ≥25°C | 4 |
| DC collector current, limited by Tvjmax | IC | | | 79 | A | TC=25°C | 4 |
| DC collector current, limited by Tvjmax | IC | | | 50 | A | TC=100°C | 4 |
| Pulsed collector current | ICpuls | | | 160 | A | tp limited by Tvjmax | 4 |
| Turn off safe operating area | | | | 160 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 4 |
| Diode forward current, limited by Tvjmax | IF | | | 79 | A | TC=25°C | 4 |
| Diode forward current, limited by Tvjmax | IF | | | 50 | A | TC=100°C | 4 |
| Diode pulsed current | IFpuls | | | 160 | A | tp limited by Tvjmax | 4 |
| Gate-emitter voltage | VGE | -20 | | 20 | V | | 4 |
| Transient gate-emitter voltage | VGE | -30 | | 30 | V | tp ≤10µs, D<0.010 | 4 |
| Power dissipation | Ptot | | | 230 | W | TC=25°C | 4 |
| Power dissipation | Ptot | | | 115 | W | TC=100°C | 4 |
| Operating junction temperature | Tvj | -40 | | 175 | °C | | 4 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 4 |
| Soldering temperature | | | | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 |
| Mounting torque | M | | | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 4 |
| IGBT thermal resistance, junction - case | Rth(j-c) | | | 0.65 | K/W | | 4 |
| Diode thermal resistance, junction - case | Rth(j-c) | | | 0.75 | K/W | | 4 |
| Thermal resistance junction - ambient | Rth(j-a) | | | 40 | K/W | | 4 |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | | | V | VGE=0V, IC=0.20mA | 5 |
| Collector-emitter saturation voltage | VCEsat | | 1.35 | 1.7 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 5 |
| Diode forward voltage | VF | | 1.45 | 1.7 | V | VGE=0V, IF=40.0A, Tvj=25°C | 5 |
| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.40mA, VCE=VGE | 5 |
| Zero gate voltage collector current | ICES | | | 50 | µA | VCE=650V, VGE=0V, Tvj=25°C | 5 |
| Zero gate voltage collector current | ICES | | | 1700 | µA | VCE=650V, VGE=0V, Tvj=175°C | 5 |
| Gate-emitter leakage current | IGES | | | 100 | nA | VCE=0V, VGE=20V | 5 |
| Collector-emitter saturation voltage | VCEsat | | 1.5 | | V | VGE=15.0V, IC=40.0A, Tvj=125°C | 5 |
| Collector-emitter saturation voltage | VCEsat | | 1.6 | | V | VGE=15.0V, IC=40.0A, Tvj=175°C | 5 |
| Diode forward voltage | VF | | 1.42 | | V | VGE=0V, IF=40.0A, Tvj=125°C | 5 |
| Diode forward voltage | VF | | 1.39 | | V | VGE=0V, IF=40.0A, Tvj=175°C | 5 |
| Transconductance | gfs | | 45 | | S | VCE=20V, IC=40.0A | 5 |
| Input capacitance | Cies | | 2500 | | pF | VCE=25V, VGE=0V, f=1MHz | 5 |
| Output capacitance | Coes | | 71 | | pF | VCE=25V, VGE=0V, f=1MHz | 5 |
| Reverse transfer capacitance | Cres | | 9 | | pF | VCE=25V, VGE=0V, f=1MHz | 5 |
| Gate charge | QG | | 95 | | nC | VCC=520V, IC=40.0A, VGE=15V | 5 |
| Internal emitter inductance | LE | | 13 | | nH | measured 5mm (0.197 in.) from case | 5 |
| Turn-on delay time | td(on) | | 19 | | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Rise time | tr | | 18 | | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Turn-off delay time | td(off) | | 130 | | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Fall time | tf | | 23 | | ns | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Turn-on energy | Eon | | 0.86 | | mJ | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Turn-off energy | Eoff | | 0.4 | | mJ | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Total switching energy | Ets | | 1.26 | | mJ | Tvj=25°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 5 |
| Turn-on delay time | td(on) | | 20 | | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Rise time | tr | | 16 | | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Turn-off delay time | td(off) | | 156 | | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Fall time | tf | | 48 | | ns | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Turn-on energy | Eon | | 1.2 | | mJ | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Turn-off energy | Eoff | | 0.69 | | mJ | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Total switching energy | Ets | | 1.89 | | mJ | Tvj=150°C, VCC=400V, IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω, RG(off)=10.0Ω, Lσ=30nH, Cσ=30pF | 6 |
| Reverse recovery time | trr | | 73 | | ns | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 |
| Diode reverse recovery charge | Qrr | | 1.1 | | µC | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 |
| Diode peak reverse recovery current | Irrm | | 23 | | A | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 |
| Diode peak rate of fall of reverse recovery current | dirr/dt | | -1500 | | A/µs | Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 6 |
| Reverse recovery time | trr | | 120 | | ns | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 |
| Diode reverse recovery charge | Qrr | | 2.6 | | µC | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 |
| Diode peak reverse recovery current | Irrm | | 36 | | A | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 |
| Diode peak rate of fall of reverse recovery current | dirr/dt | | -1250 | | A/µs | Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs | 7 |
## CAD (KiCad official)
- Symbol: `IKW40N65ES5`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ikw40n65es5-etched.step` / `ikw40n65es5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikw40n65es5.step` / `ikw40n65es5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894882177945600) (16 pp, sha256 `8373dab5268d42cf`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ikw40n65es5-datasheet.pdf)