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IKW40N120H3

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by adom

Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKW40N120H3

Infineon Technologies · IGBTs · TO-247-3

IKW40N120H3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage limited to ±20 V, threshold VGE(th) 5.0 to 6.5 V at IC=1.00 mA.
2 C passive Collector (also connected to the mounting tab); collector-emitter voltage 1200 V, DC collector current 40.0 A at TC=100°C.
3 E passive Emitter; carries the IGBT current, with the anti-parallel diode forward current 20.0 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE=0V, IC=0.50mA 5
Collector-emitter saturation voltage VCEsat 2.05 2.4 V VGE=15.0V, IC=40.0A, Tvj=25°C 5
Collector-emitter saturation voltage VCEsat 2.5 V VGE=15.0V, IC=40.0A, Tvj=125°C 5
Collector-emitter saturation voltage VCEsat 2.7 V VGE=15.0V, IC=40.0A, Tvj=175°C 5
Diode forward voltage VF 1.8 2.35 V VGE=0V, IF=20.0A, Tvj=25°C 5
Diode forward voltage VF 1.85 V VGE=0V, IF=20.0A, Tvj=175°C 5
Diode forward voltage VF 2.4 3.05 V VGE=0V, IF=40.0A, Tvj=25°C 5
Diode forward voltage VF 2.6 V VGE=0V, IF=40.0A, Tvj=125°C 5
Gate-emitter threshold voltage VGE(th) 5 5.8 6.5 V IC=1.00mA, VCE=VGE 5
Zero gate voltage collector current ICES 250 µA VCE=1200V, VGE=0V, Tvj=25°C 5
Zero gate voltage collector current ICES 2500 µA VCE=1200V, VGE=0V, Tvj=175°C 5
Gate-emitter leakage current IGES 600 nA VCE=0V, VGE=20V 5
Collector-emitter voltage VCE 1200 V 4
DC collector current IC 80 A TC=25°C, limited by Tvjmax 4
DC collector current IC 40 A TC=100°C, limited by Tvjmax 4
Pulsed collector current ICpuls 160 A tp limited by Tvjmax 4
Turn off safe operating area 160 A VCE ≤1200V, Tvj ≤175°C 4
Diode forward current IF 40 A TC=25°C, limited by Tvjmax 4
Diode forward current IF 20 A TC=100°C, limited by Tvjmax 4
Diode pulsed current IFpuls 160 A tp limited by Tvjmax 4
Gate-emitter voltage VGE -20 20 V 4
Short circuit withstand time tSC 10 µs VGE=15.0V, VCC ≤600V, Tvj=175°C, <1000 short circuits, ≥1.0s between 4
Power dissipation Ptot 483 W TC=25°C 4
Power dissipation Ptot 220 W TC=100°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature 260 °C wave soldering 1.6mm (0.063in.) from case for 10s 4
Mounting torque M 0.6 Nm M3 screw, max 3 mounting processes 4
IGBT thermal resistance, junction - case Rth(j-c) 0.31 K/W 4
Diode thermal resistance, junction - case Rth(j-c) 1.11 K/W 4
Thermal resistance junction - ambient Rth(j-a) 40 K/W 4
Transconductance gfs 20 S VCE=20V, IC=15.0A 5
Input capacitance Cies 2330 pF VCE=25V, VGE=0V, f=1MHz 5
Output capacitance Coes 185 pF VCE=25V, VGE=0V, f=1MHz 5
Reverse transfer capacitance Cres 130 pF VCE=25V, VGE=0V, f=1MHz 5
Gate charge QG 185 nC VCC=960V, IC=40.0A, VGE=15V 5
Internal emitter inductance LE 13 nH measured 5mm (0.197 in.) from case 5
Short circuit collector current IC(SC) 139 A VGE=15.0V, VCC ≤600V, tSC ≤10µs, Tvj=175°C 5
Turn-on energy Eon 3.2 mJ Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0Ω 6
Turn-off energy Eoff 1.2 mJ Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(off)=12.0Ω 6
Total switching energy Ets 4.4 mJ Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V 6
Turn-on energy Eon 4.4 mJ Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0Ω 6
Turn-off energy Eoff 2.6 mJ Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(off)=12.0Ω 6
Total switching energy Ets 7 mJ Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V 6
Turn-on delay time td(on) 30 ns Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V 6
Turn-off delay time td(off) 290 ns Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V 6
Diode reverse recovery time trr 355 ns Tvj=25°C, VR=600V, IF=40.0A, diF/dt=500A/µs 6
Diode reverse recovery time trr 639 ns Tvj=175°C, VR=600V, IF=40.0A, diF/dt=500A/µs 6

CAD (KiCad official)

  • Symbol: IKW40N120H3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw40n120h3-etched.step / ikw40n120h3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw40n120h3.step / ikw40n120h3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 fc2f8dff4c1cbea8, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF