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IKW40N120CS7XKSA1
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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IKW40N120CS7XKSA1
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IKW40N120CS7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated at ±20 V (±25 V transient for tp ≤ 0.5 µs) with a typical threshold VGEth of 5.70 V. |
| 2 | C | passive | Collector (also the diode cathode); collector-emitter voltage is rated at 1200 V with 40 A rated collector current. |
| 3 | E | passive | Emitter (also the diode anode); internal emitter inductance is 13.0 nH typical, measured 5 mm from the case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | wave soldering, 1.6 mm from case, 10 s | 3 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting process: 3 | 3 | ||
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter voltage | VCE | 1200 | V | Tvj ≥ 25 °C | 3 | ||
| DC collector current | IC | 82 | A | TC = 25 °C | 3 | ||
| DC collector current | IC | 56 | A | TC = 100 °C | 3 | ||
| Pulsed collector current | ICpuls | 120 | A | tp limited by Tvjmax | 3 | ||
| Turn-off safe operating area | 120 | A | VCE ≤ 1200 V, Tvj ≤ 175 °C | 3 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -25 | 25 | V | tp ≤ 0.5 µs, D < 0.001 | 3 | |
| Short circuit withstand time | tSC | 8 | µs | VCC ≤ 600 V, VGE = 15 V, <1000 short circuits, ≥1.0 s between, Tvj = 150 °C | 3 | ||
| Power dissipation | Ptot | 357 | W | TC = 25 °C | 3 | ||
| Power dissipation | Ptot | 179 | W | TC = 100 °C | 3 | ||
| Collector-emitter saturation voltage | VCE sat | 1.65 | 2 | V | IC = 40.0 A, VGE = 15 V, Tvj = 25 °C | 3 | |
| Collector-emitter saturation voltage | VCE sat | 2 | V | IC = 40.0 A, VGE = 15 V, Tvj = 175 °C | 3 | ||
| Gate-emitter threshold voltage | VGEth | 5.15 | 5.7 | 6.45 | V | IC = 0.78 mA, VCE = VGE, Tvj = 25 °C | 4 |
| Zero gate voltage collector current | ICES | 40 | µA | VCE = 1200 V, VGE = 0 V, Tvj = 25 °C | 4 | ||
| Zero gate voltage collector current | ICES | 3500 | µA | VCE = 1200 V, VGE = 0 V, Tvj = 175 °C | 4 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0 V, VGE = 20 V | 4 | ||
| Operating junction temperature (IGBT) | Tvj | -40 | 175 | °C | 5 | ||
| IGBT thermal resistance, junction-case | Rthjc | 0.3 | 0.42 | K/W | 5 | ||
| Repetitive peak reverse voltage | VRRM | 1200 | V | Tvj ≥ 25 °C | 5 | ||
| Diode forward current | IF | 69 | A | TC = 25 °C | 5 | ||
| Diode forward current | IF | 46 | A | TC = 100 °C | 5 | ||
| Diode pulsed current | IFpuls | 120 | A | limited by Tvjmax | 5 | ||
| Diode power dissipation | Ptot | 208 | W | TC = 25 °C | 5 | ||
| Diode power dissipation | Ptot | 104 | W | TC = 100 °C | 5 | ||
| Diode forward voltage | VF | 1.65 | 2.15 | V | IF = 40.0 A, Tvj = 25 °C | 5 | |
| Reverse leakage current | IR | 40 | µA | VR = 1200 V, Tvj = 25 °C | 5 | ||
| Reverse leakage current | IR | 3500 | µA | VR = 1200 V, Tvj = 175 °C | 5 | ||
| Diode thermal resistance, junction-case | Rthjc | 0.55 | 0.75 | K/W | 6 | ||
| Operating junction temperature (diode) | Tvj | -40 | 175 | °C | 6 |
CAD (KiCad official)
- Symbol:
IKW40N120CS7XKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw40n120cs7xksa1-etched.step/ikw40n120cs7xksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw40n120cs7xksa1.step/ikw40n120cs7xksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
bfb3c7ddd9b73725, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IKW40N120CS7XKSA1
**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3
IKW40N120CS7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated at ±20 V (±25 V transient for tp ≤ 0.5 µs) with a typical threshold VGEth of 5.70 V. |
| 2 | C | passive | Collector (also the diode cathode); collector-emitter voltage is rated at 1200 V with 40 A rated collector current. |
| 3 | E | passive | Emitter (also the diode anode); internal emitter inductance is 13.0 nH typical, measured 5 mm from the case. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |
| Soldering temperature | | | | 260 | °C | wave soldering, 1.6 mm from case, 10 s | 3 |
| Mounting torque | M | | | 0.6 | Nm | M3 screw; maximum of mounting process: 3 | 3 |
| Thermal resistance, junction-ambient | Rth(j-a) | | | 40 | K/W | | 3 |
| Collector-emitter voltage | VCE | | | 1200 | V | Tvj ≥ 25 °C | 3 |
| DC collector current | IC | | | 82 | A | TC = 25 °C | 3 |
| DC collector current | IC | | | 56 | A | TC = 100 °C | 3 |
| Pulsed collector current | ICpuls | | | 120 | A | tp limited by Tvjmax | 3 |
| Turn-off safe operating area | | | | 120 | A | VCE ≤ 1200 V, Tvj ≤ 175 °C | 3 |
| Gate-emitter voltage | VGE | -20 | | 20 | V | | 3 |
| Transient gate-emitter voltage | VGE | -25 | | 25 | V | tp ≤ 0.5 µs, D < 0.001 | 3 |
| Short circuit withstand time | tSC | | | 8 | µs | VCC ≤ 600 V, VGE = 15 V, <1000 short circuits, ≥1.0 s between, Tvj = 150 °C | 3 |
| Power dissipation | Ptot | | | 357 | W | TC = 25 °C | 3 |
| Power dissipation | Ptot | | | 179 | W | TC = 100 °C | 3 |
| Collector-emitter saturation voltage | VCE sat | | 1.65 | 2 | V | IC = 40.0 A, VGE = 15 V, Tvj = 25 °C | 3 |
| Collector-emitter saturation voltage | VCE sat | | | 2 | V | IC = 40.0 A, VGE = 15 V, Tvj = 175 °C | 3 |
| Gate-emitter threshold voltage | VGEth | 5.15 | 5.7 | 6.45 | V | IC = 0.78 mA, VCE = VGE, Tvj = 25 °C | 4 |
| Zero gate voltage collector current | ICES | | | 40 | µA | VCE = 1200 V, VGE = 0 V, Tvj = 25 °C | 4 |
| Zero gate voltage collector current | ICES | | | 3500 | µA | VCE = 1200 V, VGE = 0 V, Tvj = 175 °C | 4 |
| Gate-emitter leakage current | IGES | | | 100 | nA | VCE = 0 V, VGE = 20 V | 4 |
| Operating junction temperature (IGBT) | Tvj | -40 | | 175 | °C | | 5 |
| IGBT thermal resistance, junction-case | Rthjc | | 0.3 | 0.42 | K/W | | 5 |
| Repetitive peak reverse voltage | VRRM | | | 1200 | V | Tvj ≥ 25 °C | 5 |
| Diode forward current | IF | | | 69 | A | TC = 25 °C | 5 |
| Diode forward current | IF | | | 46 | A | TC = 100 °C | 5 |
| Diode pulsed current | IFpuls | | | 120 | A | limited by Tvjmax | 5 |
| Diode power dissipation | Ptot | | | 208 | W | TC = 25 °C | 5 |
| Diode power dissipation | Ptot | | | 104 | W | TC = 100 °C | 5 |
| Diode forward voltage | VF | | 1.65 | 2.15 | V | IF = 40.0 A, Tvj = 25 °C | 5 |
| Reverse leakage current | IR | | | 40 | µA | VR = 1200 V, Tvj = 25 °C | 5 |
| Reverse leakage current | IR | | | 3500 | µA | VR = 1200 V, Tvj = 175 °C | 5 |
| Diode thermal resistance, junction-case | Rthjc | | 0.55 | 0.75 | K/W | | 6 |
| Operating junction temperature (diode) | Tvj | -40 | | 175 | °C | | 6 |
## CAD (KiCad official)
- Symbol: `IKW40N120CS7XKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ikw40n120cs7xksa1-etched.step` / `ikw40n120cs7xksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikw40n120cs7xksa1.step` / `ikw40n120cs7xksa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0) (16 pp, sha256 `bfb3c7ddd9b73725`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ikw40n120cs7xksa1-datasheet.pdf)