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IKW30N60TFKSA1
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownIKW30N60TFKSA1
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IKW30N60TFKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; maximum gate-emitter voltage is 20 V and the gate-emitter threshold voltage is 4.1 V min, 4.9 V typ, 5.7 V max at IC=0.43 mA. |
| 2 | C | passive | Collector (also the cathode of the anti-parallel diode); collector-emitter voltage is rated 600 V and DC collector current is 45 A at TC=25°C (39 A at 100°C). |
| 3 | E | passive | Emitter (also the anode of the anti-parallel diode); the datasheet gives a 13 nH internal emitter inductance measured 5 mm from the case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 600 | V | VGE=0V, IC=0.2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1.5 | 2.05 | V | VGE = 15V, IC=30A, Tj=25C | 2 | |
| Collector-emitter saturation voltage | VCE(sat) | 1.9 | V | VGE = 15V, IC=30A, Tj=175C | 2 | ||
| Diode forward voltage | VF | 1.65 | 2.05 | V | VGE=0V, IF=30A, Tj=25C | 2 | |
| Diode forward voltage | VF | 1.6 | V | VGE=0V, IF=30A, Tj=175C | 2 | ||
| Gate-emitter threshold voltage | VGE(th) | 4.1 | 4.9 | 5.7 | V | IC=0.43mA, VCE=VGE | 2 |
| Zero gate voltage collector current | ICES | 40 | µA | VCE=600V, VGE=0V, Tj=25C | 2 | ||
| Zero gate voltage collector current | ICES | 2000 | µA | VCE=600V, VGE=0V, Tj=175C | 2 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 2 | ||
| IGBT thermal resistance, junction-case | RthJC | 0.8 | K/W | 2 | |||
| Diode thermal resistance, junction-case | RthJCD | 1.05 | K/W | 2 | |||
| Thermal resistance, junction-ambient | RthJA | 40 | K/W | 2 | |||
| Collector-emitter voltage | VCE | 600 | V | Tj ≥ 25C | 1 | ||
| DC collector current | IC | 45 | A | TC = 25C, value limited by bondwire | 1 | ||
| DC collector current | IC | 39 | A | TC = 100C | 1 | ||
| Pulsed collector current | ICpuls | 90 | A | tp limited by Tjmax | 1 | ||
| Turn off safe operating area | 90 | A | VCE = 600V, Tj = 175C, tp = 1µs | 1 | |||
| Diode forward current | IF | 45 | A | TC = 25C, value limited by bondwire | 1 | ||
| Diode forward current | IF | 39 | A | TC = 100C | 1 | ||
| Diode pulsed current | IFpuls | 90 | A | tp limited by Tjmax | 1 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 1 | ||
| Short circuit withstand time | tSC | 5 | µs | VGE = 15V, VCC ≤ 400V, Tj ≤ 150C | 1 | ||
| Power dissipation | Ptot | 187 | W | TC = 25C | 1 | ||
| Operating junction temperature | Tj | -40 | 175 | C | 1 | ||
| Storage temperature | Tstg | -55 | 150 | C | 1 | ||
| Soldering temperature | 260 | C | 1.6mm (0.063 in.) from case for 10s | 1 | |||
| Transconductance | gfs | 16.7 | S | VCE=20V, IC=30A | 2 | ||
| Input capacitance | Ciss | 1630 | pF | VCE=25V, VGE=0V, f=1MHz | 2 | ||
| Output capacitance | Coss | 108 | pF | VCE=25V, VGE=0V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 50 | pF | VCE=25V, VGE=0V, f=1MHz | 2 | ||
| Gate charge | QGate | 167 | nC | VCC =480V, IC=30A, VGE=15V | 2 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 2 | ||
| Short circuit collector current | IC(SC) | 275 | A | VGE=15V, tSC ≤ 5µs, VCC = 400V, Tj = 150C | 2 | ||
| Turn-on delay time | td(on) | 23 | ns | Tj=25C, VCC=400V, IC=30A, VGE=0/15V, rG=10.6Ω | 3 | ||
| Rise time | tr | 21 | ns | Tj=25C, VCC=400V, IC=30A, VGE=0/15V, rG=10.6Ω | 3 | ||
| Turn-off delay time | td(off) | 254 | ns | Tj=25C, VCC=400V, IC=30A, VGE=0/15V, rG=10.6Ω | 3 | ||
| Fall time | tf | 46 | ns | Tj=25C, VCC=400V, IC=30A, VGE=0/15V, rG=10.6Ω | 3 | ||
| Total switching energy | Ets | 1.46 | mJ | Tj=25C, VCC=400V, IC=30A, VGE=0/15V, rG=10.6Ω | 3 | ||
| Diode reverse recovery time | trr | 143 | ns | Tj=25C, VR=400V, IF=30A, diF/dt=910A/µs | 3 | ||
| Total switching energy | Ets | 2.1 | mJ | Tj=175C, VCC=400V, IC=30A, VGE=0/15V, rG=10.6Ω | 3 | ||
| Diode reverse recovery time | trr | 225 | ns | Tj=175C, VR=400V, IF=30A, diF/dt=910A/µs | 3 |
CAD (KiCad official)
- Symbol:
IKW30N60TFKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw30n60tfksa1-etched.step/ikw30n60tfksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw30n60tfksa1.step/ikw30n60tfksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
a76fc1b710bc7dda, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).