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IKW30N60T

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Infineon Technologies IGBT Transistors / Modules, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikw30n60tfactory-2.0.0extractor-text

Verified IKW30N60T

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IKW30N60T · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 13-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-l26ebxfq/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ikw30n60t.kicad_sym✓ ikw30n60t.kicad_mod✓ ikw30n60t.step
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IKW30N60T

Infineon Technologies · IGBT Transistors / Modules · TO-247

IKW30N60T from Infineon Technologies, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, with a maximum gate-emitter voltage of ±20 V and a typical threshold VGE(th) of 4.9 V (4.1 to 5.7 V at IC = 0.43 mA).
2 C passive Collector of the IGBT (also the cathode of the anti-parallel diode), rated 600 V VCE and 60 A DC at TC = 25°C (30 A at TC = 100°C).
3 E passive Emitter of the IGBT (also the anode of the anti-parallel diode), with 7 nH internal emitter inductance measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V 1
DC collector current IC 60 A TC = 25°C 1
DC collector current IC 30 A TC = 100°C 1
Pulsed collector current ICpuls 90 A tp limited by Tjmax 1
Turn off safe operating area 90 A VCE ≤ 600V, Tj ≤ 175°C 1
Diode forward current IF 60 A TC = 25°C 1
Diode forward current IF 30 A TC = 100°C 1
Diode pulsed current IFpuls 90 A tp limited by Tjmax 1
Gate-emitter voltage VGE -20 20 V 1
Short circuit withstand time tSC 5 µs VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1
Power dissipation Ptot 187 W TC = 25°C 1
Operating junction temperature Tj -40 175 °C 1
Storage temperature Tstg -55 175 °C 1
Soldering temperature 260 °C 1.6mm (0.063 in.) from case for 10s 1
IGBT thermal resistance, junction, case RthJC 0.8 K/W TO-247 2
Diode thermal resistance, junction, case RthJCD 1.05 K/W TO-247 2
Thermal resistance, junction, ambient RthJA 40 K/W TO-247 AC 2
Collector-emitter breakdown voltage V(BR)CES 600 V VGE=0V, IC=0.2mA 2
Collector-emitter saturation voltage VCE(sat) 1.5 1.9 V VGE = 15V, IC=30A, Tj=25°C 2
Collector-emitter saturation voltage VCE(sat) 2.05 V VGE = 15V, IC=30A, Tj=175°C 2
Diode forward voltage VF 1.65 2.05 V VGE=0V, IF=30A, Tj=25°C 2
Diode forward voltage VF 1.6 V VGE=0V, IF=30A, Tj=175°C 2
Gate-emitter threshold voltage VGE(th) 4.1 4.9 5.7 V IC=0.43mA, VCE=VGE 2
Zero gate voltage collector current ICES 40 µA VCE=600V, VGE=0V, Tj=25°C 2
Zero gate voltage collector current ICES 1000 µA VCE=600V, VGE=0V, Tj=175°C 2
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 2
Transconductance gfs 16.7 S VCE=20V, IC=30A 2
Input capacitance Ciss 1630 pF VCE=25V, VGE=0V, f=1MHz 2
Output capacitance Coss 108 pF VCE=25V, VGE=0V, f=1MHz 2
Reverse transfer capacitance Crss 50 pF VCE=25V, VGE=0V, f=1MHz 2
Gate charge QGate 167 nC VCC=480V, IC=30A, VGE=15V 2
Internal emitter inductance LE 7 nH measured 5mm (0.197 in.) from case, TO-247-3-1 2
Short circuit collector current IC(SC) 275 A VGE=15V, tSC ≤5µs, VCC = 400V, Tj = 150°C 2
Turn-on delay time td(on) 23 ns Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Rise time tr 21 ns Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Turn-off delay time td(off) 254 ns Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Fall time tf 46 ns Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Turn-on energy Eon 0.69 mJ Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Turn-off energy Eoff 0.77 mJ Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Total switching energy Ets 1.46 mJ Tj=25°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Diode reverse recovery time trr 143 ns Tj=25°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Diode reverse recovery charge Qrr 0.92 µC Tj=25°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Diode peak reverse recovery current Irrm 16.3 A Tj=25°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Diode peak rate of fall of reverse recovery current dirr/dt 603 A/µs Tj=25°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Turn-on delay time td(on) 24 ns Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Rise time tr 26 ns Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Turn-off delay time td(off) 292 ns Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Fall time tf 90 ns Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Turn-on energy Eon 1 mJ Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Turn-off energy Eoff 1.1 mJ Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Total switching energy Ets 2.1 mJ Tj=175°C, VCC=400V, IC=30A, VGE=0/15V, RG=10.6Ω, Lσ=136nH, Cσ=39pF 3
Diode reverse recovery time trr 225 ns Tj=175°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Diode reverse recovery charge Qrr 2.39 µC Tj=175°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Diode peak reverse recovery current Irrm 22.3 A Tj=175°C, VR=400V, IF=30A, diF/dt=910A/µs 3
Diode peak rate of fall of reverse recovery current dirr/dt 310 A/µs Tj=175°C, VR=400V, IF=30A, diF/dt=910A/µs 3

CAD (KiCad official)

  • Symbol: IKW30N60T
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ikw30n60t-etched.step / ikw30n60t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw30n60t.step / ikw30n60t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 137cb25d1b62d721, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF