main
Ray ikp10n60t: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) b125ad5 1mo ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ikp10n60t",
  "title": "IKP10N60T",
  "brief": "Infineon Technologies IGBT Transistors / Modules, TO-220-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "ikp10n60t"
  ],
  "component": {
    "mpn": "IKP10N60T",
    "manufacturer": "Infineon Technologies",
    "package": "TO-220-3",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "IGBT Transistors / Modules",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894639772610560",
    "parts": {
      "symbol": "ikp10n60t.kicad_sym",
      "footprint": "ikp10n60t.kicad_mod",
      "model_3d": "ikp10n60t-etched.glb",
      "model_3d_plain": "ikp10n60t.glb",
      "model_3d_step": "ikp10n60t-etched.step",
      "model_3d_step_plain": "ikp10n60t.step",
      "lbr": "ikp10n60t.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated gate control terminal for the IGBT. V_GE threshold typ. 4.6V (min 4.1V, max 5.7V at I_C=0.3mA); absolute maximum V_GE = ±20V. Drive with V_GE = 15V for full enhancement (V_CE(sat) ~1.5V typ. at I_C=10A)."
      },
      {
        "number": "2",
        "name": "C",
        "type": "passive",
        "description": "Collector. High-voltage power terminal of the IGBT and cathode of the co-packaged anti-parallel Emitter Controlled HE freewheeling diode. V_CES = 600V; DC I_C = 24A @ T_C=25°C (18A @ 100°C); pulsed I_Cpuls = 30A. Electrically connected to the metal mounting tab of the TO-220 package."
      },
      {
        "number": "3",
        "name": "E",
        "type": "passive",
        "description": "Emitter. Low-side power terminal of the IGBT and anode of the co-packaged anti-parallel freewheeling diode; also the reference for the gate drive (V_GE). Diode forward current I_F = 24A DC @ T_C=25°C (18A @ 100°C), V_F typ. 1.6V."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894639772610560",
        "pages": 13,
        "sha256": "e7ca7e4b662ce6e3",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "ikp10n60t.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          10.25,
          4.455,
          28.525
        ],
        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
        "sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "ikp10n60t-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          10.25,
          4.455,
          28.525
        ],
        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
        "sha256": "2199f6a6bee47e7754e18fafe26cbb5a35be208cfbf22d4829c38eca5afca3a8",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "TO-220-3",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "ikp10n60t"
  ],
  "discovery_pitch": "IKP10N60T (Infineon Technologies) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "ikp10n60t.kicad_sym",
    "ikp10n60t.kicad_mod",
    "ikp10n60t.glb",
    "ikp10n60t.step",
    "ikp10n60t.lbr",
    "docs/hero.png",
    "docs/ikp10n60t-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-24T22:28:36.697Z"
}