IKN06N60RC2ATMA1 from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the IGBT, with a rated gate-emitter voltage of ±20 V (±30 V transient for tp ≤ 10 µs) and a threshold of 4.3 to 5.7 V.
2	C	passive	Collector (exposed tab) of the IGBT and cathode of the integrated diode, rated for VCE = 600 V and DC collector current of 8 A at Tc = 25 °C.
3	E	passive	Emitter of the IGBT and anode of the integrated reverse-conducting diode, carrying the main current return.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	SOT-223-3
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Storage temperature	Tstg	-55		150	°C		3
Soldering temperature	Tsold			260	°C	wave soldering / reflow soldering (MSL1 according to JEDEC J-STA-020)	3
Collector-emitter voltage	VCE			600	V	Tvj ≥ 25 °C	3
DC collector current	IC			8	A	Tc = 25 °C	3
DC collector current	IC			5.6	A	Tc = 100 °C	3
Pulsed collector current	ICpulse			18	A	tp limited by Tvjmax	3
Turn-off safe operating area				18	A	VCE ≤ 600 V, tp = 1 µs, Tvj ≤ 150 °C	3
Gate-emitter voltage	VGE	-20		20	V		3
Transient gate-emitter voltage	VGE	-30		30	V	tp ≤ 10 µs, D < 0.01	3
Short-circuit withstand time	tSC			3	µs	VCC ≤ 400 V, VGE = 15 V, allowed number of short circuits < 1000, time between short circuits ≥ 1.0 s, Tvj = 150 °C	3
Power dissipation	Ptot			7.2	W	Tc = 25 °C	3
Power dissipation	Ptot			2.9	W	Tc = 100 °C	3
Thermal resistance, junction-ambient (min. footprint)	Rth(j-a)			160	K/W	min. footprint	3
Thermal resistance, junction-ambient (6 cm2 Cu on PCB)	Rth(j-a)			75	K/W	6 cm2 Cu on PCB	3
IGBT thermal resistance, junction-case	Rth(j-c)			17.3	K/W	IGBT; single cooling pulse basis	3
Diode thermal resistance, junction-case	Rth(j-c)			24.4	K/W	Diode; single cooling pulse basis	3
Gate-emitter threshold voltage	VGEth	4.3	5	5.7	V	IC = 65 µA, VCE = VGE	4
Collector-emitter saturation voltage	VCEsat		2	2.3	V	IC = 6 A, VGE = 15 V, Tvj = 25 °C	4
Operating junction temperature	Tvj	-40		150	°C		5
Repetitive peak reverse voltage	VRRM			600	V	Tvj ≥ 25 °C	5
Diode forward current	IF			5.6	A	Tc = 25 °C	5
Diode forward current	IF			2.5	A	Tc = 100 °C	5
Diode pulsed current	IFpulse			18	A	tp limited by Tvjmax	5
Diode forward voltage	VF		1.85	2.2	V	IF = 6 A, Tvj = 25 °C	5

CAD (KiCad official)

Symbol: IKN06N60RC2ATMA1
Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
3D model: SOT-223-3 (KiCad packages3D, STEP)
3D model files: ikn06n60rc2atma1-etched.step / ikn06n60rc2atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikn06n60rc2atma1.step / ikn06n60rc2atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (17 pp, sha256 9ecaa3c85ae061a9, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IKN06N60RC2ATMA1

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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