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IKN03N60RC2ATMA1

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Infineon Technologies IGBT Transistors / Modules, SOT-223-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKN03N60RC2ATMA1

Infineon Technologies · IGBT Transistors / Modules · SOT-223-3

IKN03N60RC2ATMA1 from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is rated ±20 V (±30 V transient for tp ≤ 10 µs) with a typical threshold VGEth of 5 V at IC = 35 µA.
2 C passive Collector (tab); collector-emitter voltage is rated 600 V and DC collector current is 3 A at Tc = 100 °C.
3 E passive Emitter; also the anode of the integrated reverse-conducting diode, which is rated 600 V repetitive peak reverse voltage.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tvj ≥ 25 °C 3
DC collector current IC 5.7 A Tc = 25 °C 3
DC collector current IC 3 A Tc = 100 °C 3
Pulsed collector current ICpulse 9 A tp limited by Tvjmax 3
Turn-off safe operating area 9 A VCE ≤ 600 V, tp = 1 µs, Tvj ≤ 150 °C 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤ 10 µs, D < 0.01 3
Short-circuit withstand time tSC 3 µs VCC ≤ 400 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C 3
Power dissipation Ptot 6.3 W Tc = 25 °C 3
Power dissipation Ptot 2.5 W Tc = 100 °C 3
Repetitive peak reverse voltage VRRM 600 V Tvj ≥ 25 °C 5
Diode forward current IF 3.9 A Tc = 25 °C 5
Diode forward current IF 1.8 A Tc = 100 °C 5
Diode pulsed current IFpulse 9 A tp limited by Tvjmax 5
Storage temperature Tstg -55 150 °C 3
Soldering temperature Tsold 260 °C wave soldering / reflow soldering (MSL1 according to JEDEC J-STA-020) 3
Operating junction temperature (IGBT) Tvj -40 150 °C 5
Operating junction temperature (diode) Tvj -40 150 °C 6
Thermal resistance junction-ambient, min. footprint Rth(j-a) 160 K/W min. footprint 3
Thermal resistance junction-ambient, 6 cm2 Cu Rth(j-a) 75 K/W 6 cm2 Cu on PCB 3
IGBT thermal resistance, junction-case Rth(j-c) 19.7 K/W single cooling pulse 3
Diode thermal resistance, junction-case Rth(j-c) 27 K/W single cooling pulse 3
Collector-emitter saturation voltage VCEsat 2 2.3 V IC = 3 A, VGE = 15 V, Tvj = 25 °C 4
Collector-emitter saturation voltage VCEsat 2.3 V IC = 3 A, VGE = 15 V, Tvj = 150 °C 4
Gate-emitter threshold voltage VGEth 4.3 5 5.7 V IC = 35 µA, VCE = VGE 4
Zero gate-voltage collector current ICES 25 µA VCE = 600 V, VGE = 0 V, Tvj = 25 °C 4
Zero gate-voltage collector current ICES 2500 µA VCE = 600 V, VGE = 0 V, Tvj = 150 °C 4
Gate-emitter leakage current IGES 100 nA VCE = 0 V, VGE = 20 V 4
Transconductance gfs 1.7 S IC = 3 A, VCE = 20 V 4
Input capacitance Cies 140 pF VCE = 25 V, VGE = 0 V, f = 1000 kHz 4
Output capacitance Coes 7 pF VCE = 25 V, VGE = 0 V, f = 1000 kHz 4
Reverse transfer capacitance Cres 6 pF VCE = 25 V, VGE = 0 V, f = 1000 kHz 4
Gate charge QG 18 nC IC = 3 A, VCC = 480 V, VGE = 15 V 4
Diode forward voltage VF 1.85 2.2 V IF = 3 A, Tvj = 25 °C 5
Diode forward voltage VF 1.9 V IF = 3 A, Tvj = 150 °C 5
Turn-on delay time td(on) 7 ns Tvj = 25 °C, IC = 3 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Rise time tr 8 ns Tvj = 25 °C, IC = 3 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Turn-off delay time td(off) 77.5 ns Tvj = 25 °C, IC = 3 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Fall time tf 48.5 ns Tvj = 25 °C, IC = 3 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Turn-on energy Eon 62 µJ Tvj = 25 °C, IC = 3 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Turn-off energy Eoff 44 µJ Tvj = 25 °C, IC = 4 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Total switching energy Ets 106 µJ Tvj = 25 °C, IC = 3 A, VCC = 400 V, VGE = 0/15 V, RGon = RGoff = 49 Ω 4
Diode reverse recovery time trr 38 ns VR = 400 V, RGon = 49 Ω, Tvj = 25 °C, IF = 3 A, -diF/dt = 362 A/µs 5
Diode reverse recovery charge Qrr 0.085 µC VR = 400 V, RGon = 49 Ω, Tvj = 25 °C, IF = 3 A, -diF/dt = 362 A/µs 5
Diode peak reverse recovery current Irrm 3.8 A VR = 400 V, RGon = 49 Ω, Tvj = 25 °C, IF = 3 A, -diF/dt = 362 A/µs 5

CAD (KiCad official)

  • Symbol: IKN03N60RC2ATMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223-3 (KiCad packages3D, STEP)
  • 3D model files: ikn03n60rc2atma1-etched.step / ikn03n60rc2atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikn03n60rc2atma1.step / ikn03n60rc2atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 384d489aa3b6ee98, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF