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IKD06N60RC2ATMA1

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Infineon Technologies IGBTs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKD06N60RC2ATMA1

Infineon Technologies · IGBTs · TO-252

IKD06N60RC2ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, with no integrated gate resistor (rG none) and a gate-emitter threshold of 4.3 to 5.7 V; absolute maximum VGE is ±20 V (±25 V transient, tp ≤10 µs).
2 C passive Collector (middle lead, shortened, internally connected to the exposed tab), rated 600 V collector-emitter with 6 A nominal current and the integrated antiparallel diode cathode.
3 E passive Emitter of the IGBT and anode of the integrated antiparallel diode, carrying the full load current (IC up to 11.7 A at Tc=25°C, pulsed 18 A).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tvj ≥25°C 3
DC collector current IC 11.7 A Tc=25°C, limited by Tvjmax 3
DC collector current IC 8 A Tc=100°C, limited by Tvjmax 3
Pulsed collector current ICpuls 18 A tp limited by Tvjmax 3
Turn off safe operating area 18 A VCE ≤600V, Tvj ≤175°C, tp=1µs 3
Diode forward current IF 5.3 A Tc=25°C, limited by Tvjmax 3
Diode forward current IF 2.8 A Tc=100°C, limited by Tvjmax 3
Diode pulsed current IFpuls 18 A tp limited by Tvjmax 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -25 25 V tp ≤10µs, D<0.010 3
Short circuit withstand time tSC 3 µs VGE=15.0V, VCC ≤400V, Tvj=150°C, allowed number of short circuits <1000, time between short circuits ≥1.0s 3
Power dissipation Ptot 51.7 W Tc=25°C 3
Power dissipation Ptot 25.9 W Tc=100°C 3
Operating junction temperature Tvj -40 175 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature 260 °C reflow soldering (MSL1 according to JEDEC J-STD-020) 3
IGBT thermal resistance, junction - case Rth(j-c) 2.9 K/W 3
Diode thermal resistance, junction - case Rth(j-c) 9.5 K/W 3
Thermal resistance, junction - ambient, min. footprint Rth(j-a) 75 K/W min. footprint 3
Thermal resistance, junction - ambient, 6cm² Cu on PCB Rth(j-a) 50 K/W 6cm² Cu on PCB 3
Collector-emitter saturation voltage VCEsat 2 2.3 V VGE=15.0V, IC=6.0A, Tvj=25°C 4
Collector-emitter saturation voltage VCEsat 2.4 V VGE=15.0V, IC=6.0A, Tvj=175°C 4
Diode forward voltage VF 1.9 2.2 V VGE=0V, IF=6.0A, Tvj=25°C 4
Diode forward voltage VF 1.95 V VGE=0V, IF=6.0A, Tvj=175°C 4
Gate-emitter threshold voltage VGE(th) 4.3 5 5.7 V IC=0.65mA, VCE=VGE 4
Zero gate voltage collector current ICES 25 µA VCE=600V, VGE=0V, Tvj=25°C 4
Zero gate voltage collector current ICES 2500 µA VCE=600V, VGE=0V, Tvj=175°C 4
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 4
Transconductance gfs 2.5 S VCE=20V, IC=6.0A 4
Input capacitance Cies 250 pF VCE=25V, VGE=0V, f=1000kHz 4
Output capacitance Coes 13 pF VCE=25V, VGE=0V, f=1000kHz 4
Reverse transfer capacitance Cres 10 pF VCE=25V, VGE=0V, f=1000kHz 4
Gate charge QG 31 nC VCC=480V, IC=6.0A, VGE=15V 4
Turn-on delay time td(on) 6 ns Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Rise time tr 11 ns Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Turn-off delay time td(off) 129 ns Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Fall time tf 30 ns Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Turn-on energy Eon 0.17 mJ Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Turn-off energy Eoff 0.08 mJ Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Total switching energy Ets 0.25 mJ Tvj=25°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 4
Diode reverse recovery time trr 98 ns Tvj=25°C, VR=400V, IF=6.0A, diF/dt=597A/µs 5
Diode reverse recovery charge Qrr 222 nC Tvj=25°C, VR=400V, IF=6.0A, diF/dt=597A/µs 5
Diode peak reverse recovery current Irrm 7 A Tvj=25°C, VR=400V, IF=6.0A, diF/dt=597A/µs 5
Turn-on delay time td(on) 6 ns Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Rise time tr 12 ns Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Turn-off delay time td(off) 170 ns Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Fall time tf 30 ns Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Turn-on energy Eon 0.24 mJ Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Turn-off energy Eoff 0.12 mJ Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Total switching energy Ets 0.36 mJ Tvj=175°C, VCC=400V, IC=6.0A, VGE=0.0/15.0V, RG(on)=49.0Ω, RG(off)=49.0Ω, Lσ=30nH, Cσ=32pF 5
Diode reverse recovery time trr 145 ns Tvj=175°C, VR=400V, IF=6.0A, diF/dt=562A/µs 5
Diode reverse recovery charge Qrr 439 nC Tvj=175°C, VR=400V, IF=6.0A, diF/dt=562A/µs 5
Diode peak reverse recovery current Irrm 9 A Tvj=175°C, VR=400V, IF=6.0A, diF/dt=562A/µs 5

CAD (KiCad official)

  • Symbol: IKD06N60RC2ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ikd06n60rc2atma1-etched.step / ikd06n60rc2atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikd06n60rc2atma1.step / ikd06n60rc2atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 f46d9547dc272446, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF