component
IHW40N65R6
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIHW40N65R6
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IHW40N65R6 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive input with rated gate-emitter voltage ±20 V (±30 V transient, tp = 10 µs) and threshold 3.2 to 4.8 V at IC = 0.40 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); rated VCE 650 V, DC collector current 83 A at TC = 25 °C and 54 A at TC = 100 °C. |
| 3 | E | passive | Emitter, with the monolithic reverse-conducting diode anode connected here; internal emitter inductance 13 nH measured 5 mm from case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥ 25 °C | 3 | ||
| DC collector current, limited by Tvjmax | IC | 83 | A | TC = 25 °C | 3 | ||
| DC collector current, limited by Tvjmax | IC | 54 | A | TC = 100 °C | 3 | ||
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 120 | A | tp limited by Tvjmax | 3 | ||
| Turn-off safe operating area | 120 | A | VCE ≤ 650 V, tP ≤ 1 µs, Tvj ≤ 175 °C | 3 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp = 10 µs, D < 0.010 | 3 | |
| Power dissipation | Ptot | 210 | W | TC = 25 °C | 3 | ||
| Power dissipation | Ptot | 105 | W | TC = 100 °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 3 | |||
| Operating junction temperature (IGBT) | Tvj | -40 | 175 | °C | 4 | ||
| Gate-emitter threshold voltage | VGEth | 3.2 | 4 | 4.8 | V | IC = 0.40 mA, VCE = VGE | 4 |
| Collector-emitter saturation voltage | VCEsat | 1.29 | 1.6 | V | VGE = 15 V, IC = 40.0 A, Tvj = 25 °C | 4 | |
| Repetitive peak reverse voltage (diode) | VRRM | 650 | V | Tvj ≥ 25 °C | 6 | ||
| Diode forward current, limited by Tvjmax | IF | 35 | A | Tc = 25 °C | 6 | ||
| Diode forward current, limited by Tvjmax | IF | 21 | A | Tc = 100 °C | 6 | ||
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 120 | A | tp limited by Tvjmax | 6 | ||
| Power dissipation (diode) | Ptot | 54 | W | TC = 25 °C | 6 | ||
| Power dissipation (diode) | Ptot | 27 | W | TC = 100 °C | 6 | ||
| Operating junction temperature (diode) | Tvj | -40 | 175 | °C | 7 | ||
| Diode forward voltage | VF | 1.5 | 1.9 | V | IF = 40.0 A, Tvj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
IHW40N65R6 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ihw40n65r6-etched.step/ihw40n65r6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ihw40n65r6.step/ihw40n65r6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
a8ff5e0b6e51a16d, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).