component
IHW30N135R5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIHW30N135R5
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IHW30N135R5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage max ±20 V (transient ±25 V for tp ≤10 µs), threshold VGE(th) 5.1 to 6.4 V at IC=0.75 mA, no integrated gate resistor. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage 1350 V, DC collector current 60 A at Tc=25°C and 30 A at Tc=100°C. |
| 3 | E | passive | Emitter, also the anode of the monolithic body diode; diode forward current 60 A at Tc=25°C and 30 A at Tc=100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 1350 | V | Tvj >= 25C | 3 | ||
| DC collector current, Tc=25C | IC | 60 | A | Tc=25C, limited by Tvjmax | 3 | ||
| DC collector current, Tc=100C | IC | 30 | A | Tc=100C, limited by Tvjmax | 3 | ||
| Pulsed collector current | ICpuls | 90 | A | tp limited by Tvjmax | 3 | ||
| Non repetitive peak collector current | ICSM | 200 | A | capacitor charging saturation current, Tvj<175C, tp<3us (footnote 1) | 3 | ||
| Turn off safe operating area | 90 | A | VCE<=1350V, Tvj<=175C, tp=1us | 3 | |||
| Diode forward current, Tc=25C | IF | 60 | A | Tc=25C, limited by Tvjmax | 3 | ||
| Diode forward current, Tc=100C | IF | 30 | A | Tc=100C, limited by Tvjmax | 3 | ||
| Diode pulsed current | IFpuls | 90 | A | tp limited by Tvjmax | 3 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -25 | 25 | V | tp<=10us, D<0.010 | 3 | |
| Power dissipation, Tc=25C | Ptot | 330 | W | Tc=25C | 3 | ||
| Power dissipation, Tc=100C | Ptot | 165 | W | Tc=100C | 3 | ||
| Operating junction temperature | Tvj | -40 | 175 | C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | C | 3 | ||
| Soldering temperature, wave soldering | 260 | C | 1.6mm (0.063in.) from case for 10s | 3 | |||
| Mounting torque, M3 screw | M | 0.6 | Nm | maximum of mounting processes: 3 | 3 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.45 | K/W | 3 | |||
| Diode thermal resistance, junction-case | Rth(j-c) | 0.45 | K/W | 3 | |||
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter breakdown voltage | V(BR)CES | 1350 | V | VGE=0V, IC=0.50mA | 4 | ||
| Collector-emitter saturation voltage, Tvj=25C | VCEsat | 1.95 | V | VGE=15.0V, IC=30.0A, Tvj=25C | 4 | ||
| Diode forward voltage, Tvj=25C | VF | 2.05 | V | VGE=0V, IF=30.0A, Tvj=25C | 4 | ||
| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.8 | 6.4 | V | IC=0.75mA, VCE=VGE | 4 |
| Zero gate voltage collector current, Tvj=25C | ICES | 100 | uA | VCE=1350V, VGE=0V, Tvj=25C | 4 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 4 | ||
| Collector-emitter saturation voltage, Tvj=25C | VCEsat | 1.65 | V | VGE=15.0V, IC=30.0A, Tvj=25C | 4 | ||
| Collector-emitter saturation voltage, Tvj=125C | VCEsat | 1.95 | V | VGE=15.0V, IC=30.0A, Tvj=125C | 4 | ||
| Collector-emitter saturation voltage, Tvj=175C | VCEsat | 2.05 | V | VGE=15.0V, IC=30.0A, Tvj=175C | 4 | ||
| Diode forward voltage, Tvj=25C | VF | 1.85 | V | VGE=0V, IF=30.0A, Tvj=25C | 4 | ||
| Diode forward voltage, Tvj=125C | VF | 2.1 | V | VGE=0V, IF=30.0A, Tvj=125C | 4 | ||
| Diode forward voltage, Tvj=175C | VF | 2.25 | V | VGE=0V, IF=30.0A, Tvj=175C | 4 | ||
| Zero gate voltage collector current, Tvj=175C | ICES | 630 | uA | VCE=1350V, VGE=0V, Tvj=175C | 4 | ||
| Transconductance | gfs | 23 | S | VCE=20V, IC=30.0A | 4 | ||
| Input capacitance | Cies | 1810 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Output capacitance | Coes | 50 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Cres | 40 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Gate charge | QG | 235 | nC | VCC=1080V, IC=30.0A, VGE=15V | 4 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197in.) from case | 4 | ||
| Turn-off delay time, Tvj=25C | td(off) | 310 | ns | Tvj=25C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 4 | ||
| Fall time, Tvj=25C | tf | 120 | ns | Tvj=25C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 4 | ||
| Turn-off energy, Tvj=25C | Eoff | 1.4 | mJ | Tvj=25C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 4 | ||
| Turn-off energy, soft switching, Tvj=25C | Eoff | 0.17 | mJ | dv/dt=200.0V/us, Tvj=25C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 4 | ||
| Turn-off delay time, Tvj=175C | td(off) | 385 | ns | Tvj=175C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 5 | ||
| Fall time, Tvj=175C | tf | 295 | ns | Tvj=175C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 5 | ||
| Turn-off energy, Tvj=175C | Eoff | 2.7 | mJ | Tvj=175C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 5 | ||
| Turn-off energy, soft switching, Tvj=175C | Eoff | 0.57 | mJ | dv/dt=200.0V/us, Tvj=175C, VCC=600V, IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0ohm, RG(off)=10.0ohm, Lsigma=175nH, Csigma=40pF | 5 |
CAD (KiCad official)
- Symbol:
IHW30N135R5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ihw30n135r5-etched.step/ihw30n135r5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ihw30n135r5.step/ihw30n135r5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
93c940e23a232b56, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).