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Ray Initial commit: component/ihw20n135r5f 1513461 1mo ago

IHW20N135R5F

FUXINSEMI · IGBT Transistors / Modules · TO-247-3

IHW20N135R5F from FUXINSEMI, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input with ±20V absolute maximum rating and threshold voltage of 4.8-6.8V at 1mA collector current.
2 Collector power_out Collector terminal conducting up to 40A at 25°C (20A at 100°C) with 1350V breakdown voltage; backside also connected to collector for thermal performance.
3 Emitter power_in Emitter terminal serving as power return path with integrated monolithic body diode rated to 40A at 25°C (20A at 100°C).

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IHW20N135R5F
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ihw20n135r5f-etched.step / ihw20n135r5f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ihw20n135r5f.step / ihw20n135r5f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (7 pp, sha256 e9637ebac040d369, retrieved 2026-09-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF