component
IHW15N120R3
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
Ray
ihw15n120r3: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding)
673a33f
1mo ago
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"package": "TO-247-3",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "IGBT Transistors / Modules",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894818650611712",
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"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate. Voltage-controlled input for switching the IGBT. VGE(th) typ 5.8V; VGE absolute max ±20V (transient ±25V). Left-most lead when viewed from the front of the TO-247-3 package (leads down)."
},
{
"number": "2",
"name": "C",
"type": "passive",
"description": "Collector. High-voltage power terminal of the IGBT and cathode of the monolithic body diode. VCE max 1200V; IC 15A at Tc=100°C (30A at Tc=25°C). Electrically connected to the metal mounting tab."
},
{
"number": "3",
"name": "E",
"type": "passive",
"description": "Emitter. Low-side power terminal of the IGBT and anode of the monolithic body diode. Gate-emitter voltage is the drive reference (VGE). Internal emitter inductance ~13 nH measured 5mm from case."
}
],
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"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
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5.03,
41.1
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"zmin_mm": -15.83,
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"footprint_binding": "identity",
"sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
"checked": "2026-10-07",
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},
{
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}
]
},
"metadata": {
"specs": {
"Manufacturer": "Infineon Technologies",
"Package": "TO-247-3",
"Category": "Transistors/Thyristors",
"Pins": "3"
}
},
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"sections": [
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"discovery_pitch": "IHW15N120R3 (Infineon Technologies) component page with datasheet-verified CAD.",
"author": {
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"email": "[email protected]"
},
"dependencies": {},
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"updated_at": "2026-09-24T22:27:48.299Z"
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