# IHW15N120R3

**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3

IHW15N120R3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Voltage-controlled input for switching the IGBT. VGE(th) typ 5.8V; VGE absolute max ±20V (transient ±25V). Left-most lead when viewed from the front of the TO-247-3 package (leads down). |
| 2 | C | passive | Collector. High-voltage power terminal of the IGBT and cathode of the monolithic body diode. VCE max 1200V; IC 15A at Tc=100°C (30A at Tc=25°C). Electrically connected to the metal mounting tab. |
| 3 | E | passive | Emitter. Low-side power terminal of the IGBT and anode of the monolithic body diode. Gate-emitter voltage is the drive reference (VGE). Internal emitter inductance ~13 nH measured 5mm from case. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `IHW15N120R3`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ihw15n120r3-etched.step` / `ihw15n120r3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ihw15n120r3.step` / `ihw15n120r3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894818650611712) (15 pp, sha256 `0919db278d0afb11`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ihw15n120r3-datasheet.pdf)