component
IGW50N60TP
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated gate control input; VGE(th) typ. 5.1V, absolute maximum VGE = \u00b120V. Drive with a low-impedance gate driver through RG(on)/RG(off) (7.0\u03a9 typical in datasheet test conditions)."+ "description": "Gate. Insulated gate control input; VGE(th) typ. 5.1V, absolute maximum VGE = ±20V. Drive with a low-impedance gate driver through RG(on)/RG(off) (7.0Ω typical in datasheet test conditions)." }, { "number": "2", "name": "C", "type": "passive",- "description": "Collector. High-voltage power terminal, VCES = 600V, IC = 80A (TC=25\u00b0C), 61A (TC=100\u00b0C); pulsed IC = 150A. Electrically connected to the TO-247 metal tab (heat sink surface)."+ "description": "Collector. High-voltage power terminal, VCES = 600V, IC = 80A (TC=25°C), 61A (TC=100°C); pulsed IC = 150A. Electrically connected to the TO-247 metal tab (heat sink surface)." }, { "number": "3", "name": "E", "type": "passive",- "description": "Emitter. Return-side power terminal; source of the load current returning to the negative rail. Internal emitter inductance LE \u2248 13 nH measured 5 mm from case."+ "description": "Emitter. Return-side power terminal; source of the load current returning to the negative rail. Internal emitter inductance LE ≈ 13 nH measured 5 mm from case." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/igw50n60tp-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }