# IGW40N60TP

**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3

IGW40N60TP from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated at ±20 V maximum, with a typical threshold VGE(th) of 5.1 V (4.1 V min, 5.7 V max) at IC=0.64 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage is rated 600 V and DC collector current 67 A at TC=25°C (48 A at TC=100°C). |
| 3 | E | passive | Emitter; power return of the IGBT, with a typical internal emitter inductance of 13 nH measured 5 mm from the case. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE |  |  | 600 | V | Tvj ≥25°C | 4 |
| DC collector current | IC |  |  | 67 | A | limited by Tvjmax; TC=25°C | 4 |
| DC collector current | IC |  |  | 48 | A | limited by Tvjmax; TC=100°C | 4 |
| Pulsed collector current | ICpuls |  |  | 120 | A | tp limited by Tvjmax | 4 |
| Turn off safe operating area current |  |  |  | 120 | A | VCE ≤600V, Tvj ≤175°C, tp=1µs | 4 |
| Gate-emitter voltage | VGE | -20 |  | 20 | V |  | 4 |
| Short circuit withstand time | tSC |  |  | 5 | µs | VGE=15.0V, VCC ≤400V, Tvj=150°C | 4 |
| Power dissipation | Ptot |  |  | 246 | W | TC=25°C | 4 |
| Power dissipation | Ptot |  |  | 123 | W | TC=100°C | 4 |
| Operating junction temperature | Tvj | -40 |  | 175 | °C |  | 4 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 4 |
| Soldering temperature |  |  |  | 260 | °C | wave soldering 1.6mm from case for 10s | 4 |
| Mounting torque | M |  |  | 0.6 | Nm | M3 screw | 4 |
| IGBT thermal resistance, junction - case | Rth(j-c) |  | 0.41 | 0.61 | K/W |  | 4 |
| Collector-emitter breakdown voltage | V(BR)CES | 600 |  |  | V | VGE=0V, IC=2.00mA | 5 |
| Collector-emitter saturation voltage | VCEsat |  | 1.6 | 1.8 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 5 |
| Collector-emitter saturation voltage | VCEsat |  | 1.94 |  | V | VGE=15.0V, IC=40.0A, Tvj=175°C | 5 |
| Gate-emitter threshold voltage | VGE(th) | 4.1 | 5.1 | 5.7 | V | IC=0.64mA, VCE=VGE | 5 |
| Zero gate voltage collector current | ICES |  |  | 40 | µA | VCE=600V, VGE=0V, Tvj=25°C | 5 |
| Gate-emitter leakage current | IGES |  |  | 100 | nA | VCE=0V, VGE=20V | 5 |

## CAD (KiCad official)

- Symbol: `IGW40N60TP`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `igw40n60tp-etched.step` / `igw40n60tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `igw40n60tp.step` / `igw40n60tp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896136535293952) (14 pp, sha256 `a004828590befcbb`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/igw40n60tp-datasheet.pdf)