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IGW08T120

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IGW08T120

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IGW08T120 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT; gate-emitter voltage is limited to ±20 V (VGE), with VGE = 15 V used for the stated short-circuit withstand time of 10 µs.
2 C passive Collector of the IGBT; rated for 1200 V collector-emitter voltage, with DC collector current of 16 A at TC = 25°C and 8 A at TC = 100°C.
3 E passive Emitter of the IGBT; internal emitter inductance LE is 13 nH typical, measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 1200 V 1
DC collector current IC 16 A TC = 25°C 1
DC collector current IC 8 A TC = 100°C 1
Pulsed collector current ICpuls 24 A tp limited by Tjmax 1
Turn off safe operating area 24 A VCE ≤ 1200V, Tj ≤ 150°C 1
Gate-emitter voltage VGE -20 20 V 1
Short circuit withstand time tSC 10 µs VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C 1
Power dissipation Ptot 70 W TC = 25°C 1
Operating junction temperature Tj -40 150 °C 1
Storage temperature Tstg -55 150 °C 1
Soldering temperature 260 °C 1.6mm (0.063 in.) from case for 10s 1
IGBT thermal resistance, junction, case RthJC 1.7 K/W 2
Thermal resistance, junction, ambient RthJA 40 K/W 2
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE=0V, IC=0.5mA 2
Collector-emitter saturation voltage VCE(sat) 1.7 2.2 V VGE = 15V, IC=8A, Tj=25°C 2
Collector-emitter saturation voltage VCE(sat) 2 V VGE = 15V, IC=8A, Tj=125°C 2
Collector-emitter saturation voltage VCE(sat) 2.2 V VGE = 15V, IC=8A, Tj=150°C 2
Gate-emitter threshold voltage VGE(th) 5 5.8 6.5 V IC=0.3mA, VCE=VGE 2
Zero gate voltage collector current ICES 0.2 mA VCE=1200V, VGE=0V, Tj=25°C 2
Zero gate voltage collector current ICES 2 mA VCE=1200V, VGE=0V, Tj=150°C 2
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 2
Transconductance gfs 5 S VCE=20V, IC=8A 2
Input capacitance Ciss 600 pF VCE=25V, VGE=0V, f=1MHz 2
Output capacitance Coss 36 pF VCE=25V, VGE=0V, f=1MHz 2
Reverse transfer capacitance Crss 28 pF VCE=25V, VGE=0V, f=1MHz 2
Gate charge QGate 53 nC VCC=960V, IC=8A, VGE=15V 2
Internal emitter inductance LE 13 nH measured 5mm (0.197 in.) from case 2
Short circuit collector current IC(SC) 48 A VGE=15V, tSC ≤10µs, VCC = 600V, Tj = 25°C 2
Turn-on delay time td(on) 40 ns Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Rise time tr 23 ns Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Turn-off delay time td(off) 450 ns Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Fall time tf 70 ns Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Turn-on energy Eon 0.67 mJ Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Turn-off energy Eoff 0.7 mJ Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Total switching energy Ets 1.37 mJ Tj=25°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Rise time tr 26 ns Tj=150°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Turn-off delay time td(off) 570 ns Tj=150°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Fall time tf 140 ns Tj=150°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Turn-on energy Eon 1.08 mJ Tj=150°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Turn-off energy Eoff 1.2 mJ Tj=150°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3
Total switching energy Ets 2.28 mJ Tj=150°C, VCC=600V, IC=8A, VGE=-15/15V, RG=81Ω, Lσ=180nH, Cσ=39pF 3

CAD (KiCad official)

  • Symbol: IGW08T120
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: igw08t120-etched.step / igw08t120-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); igw08t120.step / igw08t120.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 52b71ac1ddc9ceef, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF