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IGP20N60H3

Public Made by Adom

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Infineon Technologies IGBT Transistors / Modules, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IGP20N60H3

Infineon Technologies · IGBT Transistors / Modules · TO-220-3

IGP20N60H3 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is rated at ±20 V maximum, with a threshold VGE(th) of 4.1 V min, 5.1 V typ and 5.7 V max at IC=0.29 mA.
2 C passive Collector, also connected to the mounting tab; collector-emitter voltage is rated at 600 V and DC collector current at 40 A (TC=25°C) or 20 A (TC=100°C).
3 E passive Emitter; the emitter current return path of the IGBT, with VCEsat of 1.95 V typ at IC=20 A, VGE=15 V, Tvj=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tvj >= 25°C 4
DC collector current IC 40 A TC=25°C, limited by Tvjmax 4
DC collector current IC 20 A TC=100°C, limited by Tvjmax 4
Pulsed collector current ICpuls 80 A tp limited by Tvjmax 4
Turn off safe operating area current 80 A VCE ≤600V, Tvj ≤175°C, tp=1µs 4
Gate-emitter voltage VGE -20 20 V 4
Short circuit withstand time tSC 5 µs VGE=15.0V, VCC ≤400V, Tvj=150°C; allowed number of short circuits < 1000, time between short circuits ≥ 1.0s 4
Power dissipation Ptot 170 W TC=25°C 4
Power dissipation Ptot 85 W TC=100°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature, wave soldering 260 °C 1.6 mm (0.063 in.) from case for 10s 4
Mounting torque M 0.6 Nm M3 screw; maximum of mounting processes: 3 4
IGBT thermal resistance, junction - case Rth(j-c) 0.88 K/W 4
Thermal resistance junction - ambient Rth(j-a) 62 K/W 4
Collector-emitter breakdown voltage V(BR)CES 600 V VGE=0V, IC=2.00mA 4
Collector-emitter saturation voltage VCEsat 1.95 2.4 V VGE=15.0V, IC=20.0A, Tvj=25°C 4
Gate-emitter threshold voltage VGE(th) 4.1 5.1 5.7 V IC=0.29mA, VCE=VGE 4
Zero gate voltage collector current ICES 40 µA VCE=600V, VGE=0V, Tvj=25°C 4
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 4
Collector-emitter saturation voltage VCEsat 2.3 V VGE=15.0V, IC=20.0A, Tvj=125°C 4
Collector-emitter saturation voltage VCEsat 2.5 V VGE=15.0V, IC=20.0A, Tvj=175°C 4
Zero gate voltage collector current ICES 1500 µA VCE=600V, VGE=0V, Tvj=175°C 4

CAD (KiCad official)

  • Symbol: IGP20N60H3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: igp20n60h3-etched.step / igp20n60h3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); igp20n60h3.step / igp20n60h3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 a415e712e22db0c4, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF