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Contents

README

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IGCM15F60GA

Infineon Technologies · Motor Driver ICs · DIP-24

IGCM15F60GA from Infineon Technologies, in a DIP-24. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VS(U) power_in U-phase high side floating IC supply offset voltage; withstands -50V transient negative voltage relative to VSS.
2 VB(U) power_in U-phase high side floating IC supply voltage (VB vs. VS recommended 13.5V to 18.5V, bootstrap supplied).
3 VS(V) power_in V-phase high side floating IC supply offset voltage; withstands -50V transient negative voltage relative to VSS.
4 VB(V) power_in V-phase high side floating IC supply voltage (VB vs. VS recommended 13.5V to 18.5V, bootstrap supplied).
5 VS(W) power_in W-phase high side floating IC supply offset voltage; withstands -50V transient negative voltage relative to VSS.
6 VB(W) power_in W-phase high side floating IC supply voltage (VB vs. VS recommended 13.5V to 18.5V, bootstrap supplied).
7 HIN(U) input U-phase high side gate driver input, positive logic, Schmitt-trigger with about 5k internal pull-down, 3.3V compatible.
8 HIN(V) input V-phase high side gate driver input, positive logic, Schmitt-trigger with about 5k internal pull-down, 3.3V compatible.
9 HIN(W) input W-phase high side gate driver input, positive logic, Schmitt-trigger with about 5k internal pull-down, 3.3V compatible.
10 LIN(U) input U-phase low side gate driver input, positive logic, Schmitt-trigger with about 5k internal pull-down, 3.3V compatible.
11 LIN(V) input V-phase low side gate driver input, positive logic, Schmitt-trigger with about 5k internal pull-down, 3.3V compatible.
12 LIN(W) input W-phase low side gate driver input, positive logic, Schmitt-trigger with about 5k internal pull-down, 3.3V compatible.
13 VDD power_in Low side control supply, recommended 14.0V to 18.5V (typ. 16V), absolute max 20V, UV lockout at 10.4V falling.
14 VFO bidirectional Fault output (open drain, external pull-up required) signalling VDD undervoltage or ITRIP overcurrent, also provides direct access to the NTC thermistor referenced to VSS.
15 ITRIP input Over current shutdown input with typ. 0.47V comparator threshold referenced to VSS, shuts down all outputs after about 1000ns.
16 VSS power_in Low side control negative supply and logic reference ground.
17 NW passive W-phase low side emitter (open emitter) for current measurement; keep connection to VSS short.
18 NV passive V-phase low side emitter (open emitter) for current measurement; keep connection to VSS short.
19 NU passive U-phase low side emitter (open emitter) for current measurement; keep connection to VSS short.
20 W power_out Motor W-phase output (high side emitter and low side collector).
21 V power_out Motor V-phase output (high side emitter and low side collector).
22 U power_out Motor U-phase output (high side emitter and low side collector).
23 P power_in Positive bus input voltage for the high side IGBTs; bus voltage must not exceed 450V (max 500V surge).
24 NC unconnected No connection.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package DIP-24
Category Power Management ICs
Pins 24

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage temperature range Tstg -40 125 °C 7
Isolation test voltage VISOL 2000 V RMS, f = 60Hz, t = 1min 7
Operating case temperature range TC -40 125 °C Refer to Figure 6 7
Max. blocking voltage VCES 600 V IC = 250µA 7
DC link supply voltage of P-N VPN 450 V Applied between P-N 7
DC link supply voltage (surge) of P-N VPN(surge) 500 V Applied between P-N 7
Output current IC -15 15 A TC = 25°C, TJ < 150°C 7
Output current IC -10 10 A TC = 80°C, TJ < 150°C 7
Maximum peak output current IC(peak) -30 30 A less than 1ms 7
Short circuit withstand time tSC 5 µs VDC ≤ 400V, TJ = 150°C 7
Power dissipation per IGBT Ptot 29 W 7
Operating junction temperature range TJ -40 150 °C 7
Single IGBT thermal resistance, junction-case RthJC 4.31 K/W 7
Module supply voltage VDD -1 20 V 7
High side floating supply voltage (VB vs. VS) VBS -1 20 V 7
Input voltage LIN, HIN VIN -1 10 V 7
Input voltage ITRIP VITRIP -1 10 V 7
Switching frequency fPWM 20 kHz 7
DC link supply voltage of P-N VPN 0 400 V 8
High side floating supply voltage (VB vs. VS) VBS 13.5 18.5 V 8
Low side supply voltage VDD 14 16 18.5 V 8
Control supply variation ΔVBS, ΔVDD -1 1 V/µs 8
Logic input voltages LIN, HIN VIN 0 5 V 8
Logic input voltage ITRIP VITRIP 0 5 V 8
Between VSS - N (including surge) VSS -5 5 V 8
Collector-Emitter saturation voltage VCE(sat) 1.6 2 V IC = 10A, TJ = 25°C 9
Collector-Emitter saturation voltage VCE(sat) 1.8 V IC = 10A, TJ = 150°C 9
Emitter-Collector forward voltage VF 1.75 2.2 V IF = 10A, TJ = 25°C 9
Emitter-Collector forward voltage VF 1.8 V IF = 10A, TJ = 150°C 9
Collector-Emitter leakage current ICES 1 mA VCE = 600V 9
Logic 1 input voltage (LIN, HIN) VIH 2.1 2.5 V 9
Logic 0 input voltage (LIN, HIN) VIL 0.7 0.9 V 9
ITRIP positive going threshold VIT,TH+ 400 470 540 mV 9
ITRIP input hysteresis VIT,HYS 40 70 mV 9
VDD and VBS supply under voltage positive going threshold VDDUV+, VBSUV+ 10.8 12.1 13 V 9
VDD and VBS supply under voltage negative going threshold VDDUV-, VBSUV- 9.5 10.4 11.2 V 9
VDD and VBS supply under voltage lockout hysteresis VDDUVH, VBSUVH 1 1.7 V 9
Input clamp voltage (HIN, LIN, ITRIP) VINCLAMP 9 10.1 12.5 V Iin=4mA 9
Quiescent VBx supply current (VBx only) IQBS 300 500 µA HIN = 0V 9
Quiescent VDD supply current (VDD only) IQDD 370 900 µA LIN = 0V, HINX = 5V 9
Input bias current IIN+ 1 1.5 mA VIN = 5V 9
ITRIP input bias current IITRIP+ 65 150 µA VITRIP = 5V 9
Fault clear time after ITRIP-fault tFLTCLR 40 65 200 µs VITRIP = 1V 10
Deadtime between low side and high side DTPWM 1.5 µs 10
Repetitive peak reverse voltage VRRM 600 V 10
Mounting torque 0.59 0.69 0.78 Nm M3 screw and washer 11
Flatness -50 100 µm Refer to Figure 8 11
Input bias current IIN- 2 µA VIN = 0V 9
VFO input bias current IFO 60 µA VFO = 5V, VITRIP = 0V 9
VFO output voltage VFO 0.5 V IFO = 10mA, VITRIP = 1V 9
Turn-on propagation delay time ton 630 ns VLIN, HIN = 5V, IC = 10A, VDC = 300V 10
Turn-off propagation delay time toff 900 ns VLIN, HIN = 0V, IC = 10A, VDC = 300V 10
Input filter time ITRIP tITRIPmin 530 ns VITRIP = 1V 10
Deadtime of gate drive circuit DTIC 380 ns 10
Bootstrap diode resistance of U-phase RBS1 35 Ω VS2 or VS3 = 300V, TJ = 25°C 10
Resistor (NTC) RNTC 85 kΩ TNTC = 25°C 11
B-constant of NTC B(25/100) 4092 K 11

CAD (KiCad official)

  • Symbol: IGCM15F60GA
  • Footprint: Package_DIP:DIP-24_W7.62mm
  • 3D model: DIP-24 (KiCad packages3D, STEP)
  • 3D model files: igcm15f60ga-etched.step / igcm15f60ga-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); igcm15f60ga.step / igcm15f60ga.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 430f85b47626d620, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF