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IDP40E65D2

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Infineon Technologies Diodes - General Purpose, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IDP40E65D2

Infineon Technologies · Diodes - General Purpose · TO-220-2

IDP40E65D2 from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Cathode lead, shown on the left lead in the package picture and internally common with the metal tab; the diode blocks up to VRRM = 650 V.
2 A passive Anode lead, shown on the right lead in the package picture; it carries the forward current, with IF = 40 A at TC = 100°C and VF typically 1.60 V at 40 A and 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 650 V 4
Diode forward current IF 80 A TC=25°C, limited by Tvjmax 4
Diode forward current IF 40 A TC=100°C, limited by Tvjmax 4
Diode pulsed current IFpuls 120 A tp limited by Tvjmax 4
Diode surge non repetitive forward current IFSM 250 A TC=25°C, tp=8.3ms, sine half wave 4
Power dissipation Ptot 200 W TC=25°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature 260 °C wave soldering 1.6 mm (0.063 in.) from case for 10s 4
Mounting torque M 0.6 Nm M3 screw, maximum of mounting processes: 3 4
Diode thermal resistance, junction - case Rth(j-c) 0.75 K/W 4
Thermal resistance junction - ambient Rth(j-a) 62 K/W 4
Diode forward voltage VF 1.6 2.2 V IF=40.0A, Tvj=25°C 4
Reverse leakage current IR 40 µA VR=650V, Tvj=25°C 4
Reverse leakage current IR 4000 µA VR=650V, Tvj=175°C 4
Diode forward voltage VF 1.65 V IF=40.0A, Tvj=175°C 4
Internal emitter inductance LE 7 nH measured 5mm (0.197 in.) from case 4
Diode reverse recovery time trr 36 ns Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode reverse recovery charge Qrr 0.4 µC Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode peak reverse recovery current Irrm 22 A Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode peak rate of fall of reverse recovery current dirr/dt -10000 A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode reverse recovery time trr 75 ns Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode reverse recovery charge Qrr 0.13 µC Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode peak reverse recovery current Irrm 2.9 A Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode peak rate of fall of reverse recovery current dirr/dt -54 A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode reverse recovery time trr 60 ns Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode reverse recovery charge Qrr 1.14 µC Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode peak reverse recovery current Irrm 32 A Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode peak rate of fall of reverse recovery current dirr/dt -8700 A/µs Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs 5
Diode reverse recovery time trr 83 ns Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode reverse recovery charge Qrr 0.32 µC Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode peak reverse recovery current Irrm 5.6 A Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5
Diode peak rate of fall of reverse recovery current dirr/dt -51 A/µs Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs 5

CAD (KiCad official)

  • Symbol: IDP40E65D2
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: idp40e65d2-etched.step / idp40e65d2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); idp40e65d2.step / idp40e65d2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 87ddaeafea3593e8, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF