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IDH10SG60CXKSA2
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Infineon Technologies SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IDH10SG60CXKSA2
Infineon Technologies · SiC Diodes · TO-220-2
IDH10SG60CXKSA2 from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode (marked C) of the thinQ! 3G SiC Schottky diode, rated for a repetitive peak reverse voltage V_RRM of 600 V at Tj = 25 °C. |
| 2 | A | passive | Anode (marked A) of the thinQ! 3G SiC Schottky diode, rated for a continuous forward current I_F of 10 A at TC < 130 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous forward current | IF | 10 | A | TC<130 °C | 1 | ||
| Non-repetitive peak forward current, sine halfwave | IF,SM | 51 | A | TC=25 °C, tp=10 ms | 1 | ||
| Non-repetitive peak forward current, sine halfwave | IF,SM | 44 | A | TC=150 °C, tp=10 ms | 1 | ||
| Non-repetitive peak forward current | IF,max | 410 | A | TC=25 °C, tp=10 µs | 1 | ||
| i2dt value | ∫i²dt | 13 | A²s | TC=25 °C, tp=10 ms | 1 | ||
| i2dt value | ∫i²dt | 10 | A²s | TC=150 °C, tp=10 ms | 1 | ||
| Repetitive peak reverse voltage | VRRM | 600 | V | Tj=25 °C | 1 | ||
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | VR=0….480 V | 1 | ||
| Power dissipation | Ptot | 120 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Soldering temperature, wavesoldering only allowed at leads | Tsold | 260 | 1.6 mm (0.063 in.) from case for 10 s | 1 | |||
| Mounting torque | 60 | Ncm | M3 and M3.5 screws | 1 | |||
| DC blocking voltage | VDC | 600 | V | IR=0.05 mA, Tj=25 °C | 2 | ||
| Diode forward voltage | VF | 1.8 | 2.1 | V | IF=10 A, Tj=25 °C | 2 | |
| Diode forward voltage | VF | 2.2 | V | IF=10 A, Tj=150 °C | 2 | ||
| Reverse current | IR | 0.8 | 90 | µA | VR=600 V, Tj=25 °C | 2 | |
| Reverse current | IR | 3.3 | 860 | µA | VR=600 V, Tj=150 °C | 2 | |
| Switching time (time constant of capacitive displacement current) | tc | 10 | ns | 2 | |||
| Thermal resistance, junction - case | RthJC | 1.25 | K/W | 2 | |||
| Thermal resistance, junction - ambient, leaded | RthJA | 62 | K/W | 2 |
CAD (KiCad official)
- Symbol:
IDH10SG60CXKSA2 - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
idh10sg60cxksa2-etched.step/idh10sg60cxksa2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);idh10sg60cxksa2.step/idh10sg60cxksa2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (7 pp, sha256
bce5b5b4e51ce27d, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IDH10SG60CXKSA2
**Infineon Technologies** · SiC Diodes · TO-220-2
IDH10SG60CXKSA2 from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode (marked C) of the thinQ! 3G SiC Schottky diode, rated for a repetitive peak reverse voltage V_RRM of 600 V at Tj = 25 °C. |
| 2 | A | passive | Anode (marked A) of the thinQ! 3G SiC Schottky diode, rated for a continuous forward current I_F of 10 A at TC < 130 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous forward current | IF | | | 10 | A | TC<130 °C | 1 |
| Non-repetitive peak forward current, sine halfwave | IF,SM | | | 51 | A | TC=25 °C, tp=10 ms | 1 |
| Non-repetitive peak forward current, sine halfwave | IF,SM | | | 44 | A | TC=150 °C, tp=10 ms | 1 |
| Non-repetitive peak forward current | IF,max | | | 410 | A | TC=25 °C, tp=10 µs | 1 |
| i2dt value | ∫i²dt | | | 13 | A²s | TC=25 °C, tp=10 ms | 1 |
| i2dt value | ∫i²dt | | | 10 | A²s | TC=150 °C, tp=10 ms | 1 |
| Repetitive peak reverse voltage | VRRM | | | 600 | V | Tj=25 °C | 1 |
| Diode dv/dt ruggedness | dv/dt | | | 50 | V/ns | VR=0….480 V | 1 |
| Power dissipation | Ptot | | | 120 | W | TC=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 175 | °C | | 1 |
| Soldering temperature, wavesoldering only allowed at leads | Tsold | | | 260 | | 1.6 mm (0.063 in.) from case for 10 s | 1 |
| Mounting torque | | | | 60 | Ncm | M3 and M3.5 screws | 1 |
| DC blocking voltage | VDC | 600 | | | V | IR=0.05 mA, Tj=25 °C | 2 |
| Diode forward voltage | VF | | 1.8 | 2.1 | V | IF=10 A, Tj=25 °C | 2 |
| Diode forward voltage | VF | | 2.2 | | V | IF=10 A, Tj=150 °C | 2 |
| Reverse current | IR | | 0.8 | 90 | µA | VR=600 V, Tj=25 °C | 2 |
| Reverse current | IR | | 3.3 | 860 | µA | VR=600 V, Tj=150 °C | 2 |
| Switching time (time constant of capacitive displacement current) | tc | | | 10 | ns | | 2 |
| Thermal resistance, junction - case | RthJC | | | 1.25 | K/W | | 2 |
| Thermal resistance, junction - ambient, leaded | RthJA | | | 62 | K/W | | 2 |
## CAD (KiCad official)
- Symbol: `IDH10SG60CXKSA2`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `idh10sg60cxksa2-etched.step` / `idh10sg60cxksa2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `idh10sg60cxksa2.step` / `idh10sg60cxksa2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/idh10sg60cxksa2-datasheet.pdf) (7 pp, sha256 `bce5b5b4e51ce27d`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/idh10sg60cxksa2-datasheet.pdf)