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IDH06SG60C

Public Made by Adom

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Infineon Technologies Schottky Barrier Diodes (SBD), TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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IDH06SG60C

Infineon Technologies · Schottky Barrier Diodes (SBD) · TO-220-2

IDH06SG60C from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Cathode of the SiC Schottky diode (Pin 1 per product summary table); repetitive peak reverse voltage VRRM 600 V, continuous forward current 6 A at TC<130 °C.
2 A passive Anode of the SiC Schottky diode (Pin 2 per product summary table); forward voltage 2.1 V typ. at IF=6 A, Tj=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC blocking voltage VDC 600 V IR=0.05 mA, Tj=25 °C 2
Diode forward voltage VF 2.1 2.3 V IF=6 A, Tj=25 °C 2
Reverse current IR 0.5 50 µA VR=600 V, Tj=25 °C 2
Reverse current IR 2 500 µA VR=600 V, Tj=150 °C 2
Switching time tc 10 ns VR=400 V, IF≤IF,max, diF/dt=200 A/µs, Tj=150 °C 2
Thermal resistance, junction - case RthJC 2.1 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 62 K/W 2
Continuous forward current IF 6 A TC<130 °C 1
Surge non-repetitive forward current, sine halfwave IF,SM 32 A TC=25 °C, tp=10 ms 1
Surge non-repetitive forward current, sine halfwave IF,SM 23 A TC=150 °C, tp=10 ms 1
Non-repetitive peak forward current IF,max 190 A TC=25 °C, tp=10 µs 1
i²t value ∫i²dt 5.1 A²s TC=25 °C, tp=10 ms 1
i²t value ∫i²dt 2.5 A²s TC=150 °C, tp=10 ms 1
Repetitive peak reverse voltage VRRM 600 V Tj=25 °C 1
Diode dv/dt ruggedness dv/dt 50 V/ns VR=0….480 V 1
Power dissipation Ptot 71 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Soldering temperature, wavesoldering only allowed at leads Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 1
Mounting torque 60 Ncm M3 and M3.5 screws 1
Diode forward voltage VF 2.8 V IF=6 A, Tj=150 °C 2
Total capacitive charge Qc 8 nC 2
Total capacitance C 130 pF VR=1 V, f=1 MHz 2
Total capacitance C 20 pF VR=300 V, f=1 MHz 2

CAD (KiCad official)

  • Symbol: IDH06SG60C
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: idh06sg60c-etched.step / idh06sg60c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); idh06sg60c.step / idh06sg60c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 1d10ebcfea0c8a58, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF