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IDH06G65C6

Infineon Technologies · Schottky Barrier Diodes (SBD) · TO-220-2

IDH06G65C6 from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode of the 650 V SiC Schottky diode (VRRM 650 V), connected internally to the case/tab.
2 Anode passive Anode of the SiC Schottky diode, rated for 6 A continuous forward current at TC ≤ 145 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous forward current IF 6 A TC ≤ 145 °C, D = 1 3
Continuous forward current IF 9 A TC ≤ 125 °C, D = 1 3
Continuous forward current IF 16 A TC ≤ 25 °C, D = 1 3
Surge-repetitive forward current, sine halfwave IF,RM 26 A TC = 25 °C, tp = 10 ms 3
Surge non-repetitive forward current, sine halfwave IF,SM 38 A TC = 25 °C, tp = 10 ms 3
Surge non-repetitive forward current, sine halfwave IF,SM 30 A TC = 150 °C, tp = 10 ms 3
Non-repetitive peak forward current IF,max 410 A TC = 25 °C, tp = 10 µs 3
i²t value ∫ i²dt 7.2 A²s TC = 25 °C, tp = 10 ms 3
i²t value ∫ i²dt 4.6 A²s TC = 150 °C, tp = 10 ms 3
Repetitive peak reverse voltage VRRM 650 V TC = 25 °C 3
Diode dv/dt ruggedness dv/dt 150 V/ns VR = 0..480 V 3
Power dissipation Ptot 54 W TC = 25°C, RthJC,max 3
Operating and storage temperature Tj, Tstg -55 175 °C 3
Mounting torque 70 Ncm M3 screw 3
Thermal resistance, junction-case RthJC 1.7 2.8 K/W 3
Thermal resistance, junction-ambient RthJA 62 K/W leaded 3
Soldering temperature Tsold 260 °C 1.6 mm (0.063 in.) from case for 10 s, wavesoldering only allowed at leads 3
DC blocking voltage VDC 650 V Tj = 25 °C 4
Diode forward voltage VF 1.25 1.35 V IF = 6 A, Tj = 25 °C 4
Diode forward voltage VF 1.5 V IF = 6 A, Tj= 150 °C 4
Reverse current IR 0.6 20 µA VR = 420 V, Tj= 25 °C 4
Reverse current IR 20 µA VR = 420 V, Tj= 125 °C 4
Reverse current IR 46 µA VR = 420 V, Tj = 150 °C 4
Total capacitive charge Qc 9.6 nC VR = 400 V, Tj = 150 °C, di/dt = 200 A/µs, IF ≤ IF,MAX 4
Total capacitance C 302 pF VR = 1 V, f = 1 MHz, Tj= 25 °C 4
Total capacitance C 18 pF VR = 300 V, f = 1 MHz, Tj= 25 °C 4
Total capacitance C 17 pF VR = 600 V, f = 1 MHz, Tj= 25 °C 4

CAD (KiCad official)

  • Symbol: IDH06G65C6
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: idh06g65c6-etched.step / idh06g65c6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); idh06g65c6.step / idh06g65c6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 743afe8b6b3e4423, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF