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ICPL-817-00BEAXW

ISOMICRON · Transistor, Photovoltaic Output Optoisolators · DIP-4

ICPL-817-00BEAXW from ISOMICRON, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive Anode of the AlGaAs infrared emitting diode; forward current is rated 60 mA maximum (IF) with a 6 V maximum reverse voltage.
2 Cathode passive Cathode of the AlGaAs infrared emitting diode, which must stay within the 6 V maximum reverse voltage (VR) rating.
3 Emitter passive Emitter of the silicon planar phototransistor; emitter-collector voltage is rated 7 V maximum (VECO).
4 Collector passive Collector of the silicon planar phototransistor; rated 80 V maximum collector-emitter voltage (VCEO) and 50 mA maximum collector current (IC).

Key specifications

Parameter Value
Manufacturer ISOMICRON
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage VF 1.24 1.4 V IF=10mA 4
Reverse Current IR 10 μA VR=6V 4
Collector Dark Current ICEO 100 nA VCE=20V, IF=0 4
Collector-Emitter Breakdown Voltage BVCEO 80 V IC=0.1mA, IF=0 4
Emitter-Collector Breakdown Voltage BVECO 7 V IE=0.1mA, IF=0 4
Current Transfer Ratio (rank B) CTR 130 260 % IF=5mA, VCE=5V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.06 0.2 V IF=20mA, IC=1mA 4
Floating Capacitance CIO 0.4 1 pF V=0, f=1MHz 4
Response Time (Rise) tr 3 18 μs VCE=2V, IC=2mA, RL=100Ω 4
Response Time (Fall) tf 4 18 μs VCE=2V, IC=2mA, RL=100Ω 4
Input Forward Current IF 60 mA 3
Peak Forward Current IFP 1 A Note 1: 100μs pulse, 100Hz frequency 3
Reverse Voltage VR 6 V 3
Input Power Dissipation PI 100 mW 3
Collector-Emitter Voltage VCEO 80 V 3
Emitter-Collector Voltage VECO 7 V 3
Collector Current IC 50 mA 3
Output Power Dissipation PO 150 mW 3
Total Power Dissipation Ptot 200 mW 3
Isolation Voltage Viso 5000 Vrms Note 2: AC for 1 minute, R.H. 40 ~ 60% 3
Operating Temperature Topr -40 110 °C 3
Storage Temperature Tstg -55 125 °C 3
Soldering Temperature Tsol 260 °C 3

CAD (KiCad official)

  • Symbol: ICPL-817-00BEAXW
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: icpl-817-00beaxw-etched.step / icpl-817-00beaxw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); icpl-817-00beaxw.step / icpl-817-00beaxw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ISOMICRON datasheet (16 pp, sha256 ac7c384496159c6d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF