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ICE3BR1765J
Public Made by Adomby adom
Infineon Technologies Battery Management ICs, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownICE3BR1765J
Infineon Technologies · Battery Management ICs · DIP-8
ICE3BR1765J from Infineon Technologies, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BA | input | Extendable blanking time is set by an external capacitor to ground that extends the built-in 20 ms blanking time, and pulling BA below 0.33 V triggers auto-restart mode. |
| 2 | FB | input | The feedback pin supplies regulation information to the protection unit and PWM comparator for duty-cycle control, and is the only control signal in Active Burst Mode at light load. |
| 3 | CS | input | Current Sense pin senses the voltage across the series resistor in the CoolMOS source, and when it reaches the current limit comparator threshold the driver output is switched off immediately. |
| 4 | Drain | passive | Connection to the drain of the integrated 650V CoolMOS, rated 650V at Tj=110°C, and shorted internally to pin 5. |
| 5 | Drain | passive | Connection to the drain of the integrated 650V CoolMOS, rated 650V at Tj=110°C, and shorted internally to pin 4. |
| 6 | n.c. | unconnected | Not connected. |
| 7 | VCC | power_in | Positive controller supply with an operating range between 10.5 V and 25 V. |
| 8 | GND | power_in | Ground of the controller. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | DIP-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Switching drain current | Is | 4.03 | A | pulse width tp limited by Tj=150°C | 19 | ||
| Pulse drain current | ID_Puls | 6.12 | A | pulse width tp limited by Tj=150°C | 19 | ||
| Avalanche energy, repetitive | EAR | 0.15 | mJ | tAR limited by max. Tj=150°C | 19 | ||
| Avalanche current, repetitive | IAR | 1.5 | A | tAR limited by max. Tj=150°C | 19 | ||
| VCC Supply Voltage | VVCC | -0.3 | 27 | V | 19 | ||
| FB Voltage | VFB | -0.3 | 5.5 | V | 19 | ||
| BA Voltage | VBA | -0.3 | 5.5 | V | 19 | ||
| CS Voltage | VCS | -0.3 | 5.5 | V | 19 | ||
| Junction Temperature | Tj | -40 | 150 | °C | Controller & CoolMOS® | 19 | |
| Storage Temperature | TS | -55 | 150 | °C | 19 | ||
| Thermal Resistance Junction-Ambient | RthJA | 90 | K/W | 19 | |||
| Soldering temperature, wavesoldering | Tsold | 260 | °C | wavesoldering only allowed at leads; 1.6mm (0.063in.) from case for 10s | 19 | ||
| ESD Capability (incl. Drain Pin) | VESD | 2 | kV | Human body model | 19 | ||
| VCC Supply Voltage (operating range) | VVCC | 25 | V | Max value limited due to Vcc OVP | 20 | ||
| Junction Temperature of Controller | TjCon | -25 | 130 | °C | Max value limited due to thermal shut down of controller | 20 | |
| Junction Temperature of CoolMOS® | TjCoolMOS | -25 | 150 | °C | 20 | ||
| Start Up Current | IVCCstart | 150 | 250 | μA | VVCC =17V | 20 | |
| VCC Charge Current | IVCCcharge1 | 5 | mA | VVCC = 0V | 20 | ||
| VCC Charge Current | IVCCcharge2 | 0.55 | 0.9 | 1.6 | mA | VVCC = 1V | 20 |
| Leakage Current of Start Up Cell and CoolMOS® | IStartLeak | 0.2 | 50 | μA | VDrain = 450V; at Tj=100°C | 20 | |
| Supply Current with Inactive Gate | IVCCsup1 | 1.5 | 2.5 | mA | 20 | ||
| Supply Current with Active Gate | IVCCsup2 | 2.7 | 3.4 | mA | IFB = 0A | 20 | |
| Supply Current in Active Burst Mode with Inactive Gate | IVCCburst1 | 450 | 950 | μA | VFB = 2.5V | 20 | |
| VCC Turn-On Threshold | VVCCon | 17 | 18 | 19 | V | 20 | |
| VCC Turn-Off Threshold | VVCCoff | 9.8 | 10.5 | 11.2 | V | 20 | |
| Trimmed Reference Voltage | VREF | 4.9 | 5 | 5.1 | V | measured at pin FB, IFB = 0 | 21 |
| Fixed Oscillator Frequency | fOSC1 | 56.5 | 65 | 73.5 | kHz | 21 | |
| Fixed Oscillator Frequency | fOSC2 | 59.8 | 65 | 70.2 | kHz | Tj = 25°C | 21 |
| Frequency Jittering Range (printed ±2.6 kHz) | fjitter | -2.6 | 2.6 | kHz | Tj = 25°C | 21 | |
| Max. Duty Cycle | Dmax | 0.7 | 0.75 | 0.8 | 21 | ||
| Min. Duty Cycle | Dmin | 0 | VFB < 0.3V | 21 | |||
| PWM-OP Gain | AV | 3.1 | 3.3 | 3.5 | 21 | ||
| VFB Operating Range Max level | VFBmax | 4.3 | V | CS=1V, limited by Comparator C4 | 21 | ||
| FB Pull-Up Resistor | RFB | 9 | 15.4 | 22 | kΩ | 21 | |
| Clamped VBA voltage during Normal Operating Mode | VBAclmp | 0.85 | 0.9 | 0.95 | V | VFB = 4V | 22 |
| Blanking time voltage limit for Comparator C3 | VBKC3 | 3.85 | 4 | 4.15 | V | 22 | |
| Over Load & Open Loop Detection Limit for Comparator C4 | VFBC4 | 3.85 | 4 | 4.15 | V | 22 | |
| Active Burst Mode Level for Comparator C5 | VFBC5 | 1.25 | 1.35 | 1.45 | V | 22 | |
| Active Burst Mode Level for Comparator C6a | VFBC6a | 3.35 | 3.5 | 3.65 | V | After Active Burst Mode is entered | 22 |
| Active Burst Mode Level for Comparator C6b | VFBC6b | 2.88 | 3 | 3.12 | V | After Active Burst Mode is entered | 22 |
| Overvoltage Detection Limit for Comparator C1 | VVCCOVP1 | 19.5 | 20.5 | 21.5 | V | VFB = 5V | 22 |
| Overvoltage Detection Limit for Comparator C2 | VVCCOVP2 | 25 | 25.5 | 26.5 | V | 22 | |
| Auto-restart Enable level at BA pin | VAE | 0.25 | 0.33 | 0.4 | V | >30μs | 22 |
| Charging current at BA pin | IBK | 10 | 13 | 16.9 | μA | Charge starts after the built-in 20ms blanking time elapsed | 22 |
| Thermal Shutdown | TjSD | 130 | 140 | 150 | °C | Controller | 22 |
| Peak Current Limitation (incl. Propagation Delay) | Vcsth | 0.96 | 1.03 | 1.1 | V | dVsense / dt = 0.6V/μs | 23 |
| Peak Current Limitation during Active Burst Mode | VCS2 | 0.29 | 0.34 | 0.38 | V | 23 | |
| CS Input Bias Current | ICSbias | -1.5 | -0.2 | μA | VCS =0V | 23 | |
| Drain Source Breakdown Voltage | V(BR)DSS | 650 | V | Tj = 110°C | 23 | ||
| Drain Source On-Resistance (Tj = 25°C) | RDSon | 1.7 | 1.96 | Ω | Tj = 25°C; at ID = 1.5A | 23 | |
| Drain Source On-Resistance (Tj = 125°C) | RDSon | 3.57 | 4.12 | Ω | Tj = 125°C; at ID = 1.5A | 23 |
CAD (KiCad official)
- Symbol:
ICE3BR1765J - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
ice3br1765j-etched.step/ice3br1765j-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ice3br1765j.step/ice3br1765j.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (31 pp, sha256
a8bedeef6c2619ad, retrieved 2026-10-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).