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HYG400P10LR1B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG400P10LR1B

HUAYI · MOSFETs · TO-263-2L

HYG400P10LR1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of -1 V to -3 V at IDS = -250 µA.
2 D passive Drain, connected to the exposed tab (centre lead is trimmed on the 2L package); drain-source voltage rated -100 V and continuous drain current -40 A at Tc=25°C.
3 S passive Source; continuous body-diode source current rated -40 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V,IDS= -250μA 2
Drain-to-Source Leakage Current IDSS -1 μA VDS= -100V,VGS=0V 2
Drain-to-Source Leakage Current IDSS -5 μA VDS= -100V,VGS=0V, TJ=55°C 2
Gate Threshold Voltage VGS(th) -1 -1.8 -3 V VDS=VGS, IDS= -250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 42 58 mΩ VGS= -10V,IDS= -20A 2
Drain-Source On-State Resistance RDS(ON) 48 65 mΩ VGS= -4.5V,IDS=-20A 2
Diode Forward Voltage VSD -0.8 -1.3 V ISD= -20A,VGS=0V 2
Drain-Source Voltage VDSS -100 V Tc=25°C 2
Gate-Source Voltage VGSS -20 20 V Tc=25°C 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS -40 A Tc=25°C 2
Pulsed Drain Current IDM -120 A Tc=25°C 2
Continuous Drain Current ID -40 A Tc=25°C 2
Continuous Drain Current ID -28.3 A Tc=100°C 2
Maximum Power Dissipation PD 100 W Tc=25°C 2
Maximum Power Dissipation PD 50 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 270 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RJC 1.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Surface mounted on 1in2 FR-4 board 2
Reverse Recovery Time trr 27 ns ISD=-20A,dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 37 nC ISD=-20A,dISD/dt=100A/μs 2
Gate Resistance RG 9.8 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 5402 pF VGS=0V, VDS= -25V, Frequency=1.0MHz 3
Output Capacitance Coss 188 pF VGS=0V, VDS= -25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 121 pF VGS=0V, VDS= -25V, Frequency=1.0MHz 3
Total Gate Charge Qg 79 nC VDS = -50V, VGS= -10V, ID= -20A 3

CAD (KiCad official)

  • Symbol: HYG400P10LR1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg400p10lr1b-etched.step / hyg400p10lr1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg400p10lr1b.step / hyg400p10lr1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 7bb85c9e93cadb7a, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF