component

HYG350P13NA1B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorhyg350p13na1bfactory-2.0.0extractor-text

Verified HYG350P13NA1B

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HYG350P13NA1B · TO-263-2 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-gqdpgzyh/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hyg350p13na1b.kicad_sym✓ hyg350p13na1b.kicad_mod✓ hyg350p13na1b.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HYG350P13NA1B

HUAYI · MOSFETs · TO-263-2

HYG350P13NA1B from HUAYI, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold -1.0 to -3.0 V (VDS=VGS, IDS=-250µA).
2 D passive Drain (exposed tab, middle lead removed in TO-263-2L); drain-source voltage -125 V, continuous drain current -39 A at Tc=25°C.
3 S passive Source; continuous body-diode source current -39 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -125 V Tc=25°C 2
Gate-Source Voltage VGSS -20 20 V Tc=25°C 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS -39 A Tc=25°C, Mounted on Large Heat Sink 2
Pulsed Drain Current IDM -150 A Tc=25°C 2
Continuous Drain Current ID -39 A Tc=25°C 2
Continuous Drain Current ID -27 A Tc=100°C 2
Maximum Power Dissipation PD 120 W Tc=25°C 2
Maximum Power Dissipation PD 60 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 1.25 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 62 °C/W Surface mounted on FR-4 board 2
Single Pulsed-Avalanche Energy EAS 388.7 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS -125 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS -1 μA VDS=-125V,VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 μA VDS=-125V,VGS=0V, TJ=100°C 2
Gate Threshold Voltage VGS(th) -1 -2.4 -3 V VDS=VGS, IDS=-250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 35 43 mΩ VGS=-10V,IDS=-20A 2
Diode Forward Voltage VSD -0.84 -1.3 V ISD=-20A,VGS=0V 2
Reverse Recovery Time trr 35.6 ns ISD=-20A, dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 58.2 nC ISD=-20A, dISD/dt=100A/μs 2
Gate Resistance RG 3 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 4118 pF VGS=0V, VDS= -25V, Frequency=1.0MHz 3
Output Capacitance Coss 285 pF VGS=0V, VDS= -25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 194.8 pF VGS=0V, VDS= -25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 35.2 ns VDD=-62V,RG=4Ω,IDS=-20A,VGS=-10V 3
Turn-on Rise Time Tr 101.2 ns VDD=-62V,RG=4Ω,IDS=-20A,VGS=-10V 3
Turn-off Delay Time td(OFF) 35 ns VDD=-62V,RG=4Ω,IDS=-20A,VGS=-10V 3
Turn-off Fall Time Tf 92.3 ns VDD=-62V,RG=4Ω,IDS=-20A,VGS=-10V 3
Total Gate Charge Qg(10V) 79.4 nC VDS =-100V, VGS=-10V, ID=-20A 3
Gate-Source Charge Qgs 13 nC VDS =-100V, VGS=-10V, ID=-20A 3
Gate-Drain Charge Qgd 30.3 nC VDS =-100V, VGS=-10V, ID=-20A 3

CAD (KiCad official)

  • Symbol: HYG350P13NA1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2 (KiCad packages3D, STEP)
  • 3D model files: hyg350p13na1b-etched.step / hyg350p13na1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg350p13na1b.step / hyg350p13na1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 d38e66ad8d944c02, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF