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HYG210P06LQ1D

Public Made by Adom

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HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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HYG210P06LQ1D

HUAYI · MOSFETs · TO-252-2L

HYG210P06LQ1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for VGSS ±20 V, with VGS(th) of -1.0 V to -3.0 V and VGS of -10 V used for the stated RDS(ON) of 19 mΩ typical.
2 D passive Drain of the P-channel MOSFET, rated for VDSS -60 V and continuous drain current ID of -40 A at Tc=25°C (-28 A at Tc=100°C), mounted on a large heat sink.
3 S passive Source of the P-channel MOSFET; the datasheet gives no separate pin-level limit, so it is bounded by the device ratings of VDSS -60 V and ID -40 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V,IDS=-250uA 2
Drain-to-Source Leakage Current IDSS -1 uA VDS=-60V, VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 uA TJ=125°C 2
Gate Threshold Voltage VGS(th) -1 -1.7 -3 V VDS=VGS, IDS=-250uA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 19 25 mΩ VGS=-10V, ID=-20A 2
Drain-Source On-state Resistance RDS(ON) 25 32 mΩ VGS=-4.5V, ID=-20A 2
Diode Forward Voltage VSD -0.9 -1.3 V ISD=-20A, VGS=0V 2
Drain-Source Voltage VDSS -60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Drain Current-Continuous IS -40 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM -140 A Tc=25°C, repetitive rating; pulse width limited by max junction temperature 2
Continuous Drain Current ID -40 A Tc=25°C 2
Continuous Drain Current ID -28 A Tc=100°C 2
Maximum Power Dissipation PD 60 W Tc=25°C 2
Maximum Power Dissipation PD 30 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 289 mJ L=0.3mH, RG=25Ω, VGS=-10V, starting TJ=25°C 2
Thermal Resistance, Junction-to-Case RθJC 2.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 110 °C/W Surface mounted on FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG210P06LQ1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg210p06lq1d-etched.step / hyg210p06lq1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg210p06lq1d.step / hyg210p06lq1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 5a6be67c49a46084, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF