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HYG180N10LS1B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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HYG180N10LS1B

HUAYI · MOSFETs · TO-263-2L

HYG180N10LS1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20 V absolute maximum, with a threshold of 1.0 to 3.0 V at IDS=250μA.
2 D passive Drain, shown as the middle position (trimmed stub) and the exposed tab; VDSS is 100 V and continuous drain current is 50 A at Tc=25°C.
3 S passive Source; the body diode carries up to 50 A continuous source current at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V Common Ratings (Tc=25°C Unless Otherwise Noted) 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 50 A Tc=25°C, Mounted on Large Heat Sink 2
Pulsed Drain Current IDM 200 A Tc=25°C 2
Continuous Drain Current ID 50 A Tc=25°C 2
Continuous Drain Current ID 35.4 A Tc=100°C 2
Maximum Power Dissipation PD 93.7 W Tc=25°C 2
Maximum Power Dissipation PD 46.8 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 1.6 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 62 °C/W Surface mounted on FR-4 board 2
Single Pulsed Avalanche Energy EAS 62.9 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=100°C 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 16.5 21 mΩ VGS=10V, IDS=25A 2
Drain-Source On-State Resistance RDS(ON) 21 27 mΩ VGS=6V, IDS=20A 2
Diode Forward Voltage VSD 0.96 1.3 V ISD=25A, VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG180N10LS1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg180n10ls1b-etched.step / hyg180n10ls1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg180n10ls1b.step / hyg180n10ls1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 63460fbec3b3328e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF