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Contents

README

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HYG170ND03LA1S

HUAYI · MOSFETs · SOP-8

HYG170ND03LA1S from HUAYI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel, 30V VDSS, 9A continuous drain current rating).
2 G2 input Gate of MOSFET 2; gate-source voltage limited to ±20V with threshold of 1V min to 3V max.
3 S1 passive Source of MOSFET 1 (N-channel, 30V VDSS, 9A continuous drain current rating).
4 G1 input Gate of MOSFET 1; gate-source voltage limited to ±20V with threshold of 1V min to 3V max.
5 D1 passive Drain of MOSFET 1; drain-source voltage rated 30V, pulsed drain current 36A.
6 D1 passive Drain of MOSFET 1 (second drain lead, tied to pin 5); drain-source voltage rated 30V.
7 D2 passive Drain of MOSFET 2; drain-source voltage rated 30V, pulsed drain current 36A.
8 D2 passive Drain of MOSFET 2 (second drain lead, tied to pin 7); drain-source voltage rated 30V.

Key specifications

Parameter Value
Manufacturer HUAYI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Source Current-Continuous (Body Diode) IS 9 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 36 A Tc=25°C; repetitive, pulse width limited by max junction temperature 2
Continuous Drain Current ID 9 A Tc=25°C 2
Continuous Drain Current ID 7.2 A Tc=70°C 2
Maximum Power Dissipation PD 2.5 W Tc=25°C 2
Maximum Power Dissipation PD 1.6 W Tc=70°C 2
Thermal Resistance, Junction-to-Case RθJc 50 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W 2
Single Pulsed-Avalanche Energy EAS 10 mJ L=0.1mH, RG=25Ω, VGS=10V, starting TJ=25°C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=30V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 1 1.6 3 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 14.5 18 mΩ VGS=10V, IDS=6A 2
Drain-Source On-State Resistance RDS(ON) 19.7 24.6 mΩ VGS=4.5V, IDS=4A 2
Diode Forward Voltage VSD 0.7 1 V ISD=1A, VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG170ND03LA1S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hyg170nd03la1s-etched.step / hyg170nd03la1s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg170nd03la1s.step / hyg170nd03la1s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 49698635395fecdd, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF