component
HYG120P06LR1D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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hyg120p06lr1d: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ HYG120P06LR1D from HUAYI, in a TO-252. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, IDS=-250uA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | -1 | uA | VDS=-60V, VGS=0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | -50 | uA | TJ=125°C | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS, IDS=-250uA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 12.5 | 16 | mΩ | VGS=-10V, ID=-20A | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 18 | 22 | mΩ | VGS=-4.5V, ID=-20A | 2 |+| Diode Forward Voltage | VSD | | -0.85 | -1.2 | V | ISD=-20A, VGS=0V | 2 |+| Drain-Source Voltage | VDSS | | | -60 | V | Common ratings (Tc=25°C unless otherwise noted) | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | Common ratings (Tc=25°C unless otherwise noted) | 2 |+| Maximum Junction Temperature | TJ | | | 175 | °C | Common ratings (Tc=25°C unless otherwise noted) | 2 |+| Storage Temperature Range | TSTG | -55 | | 175 | °C | Common ratings (Tc=25°C unless otherwise noted) | 2 |+| Drain Current-Continuous | IS | | | -55 | A | Tc=25°C, mounted on large heat sink | 2 |+| Pulsed Drain Current | IDM | | | -210 | A | Tc=25°C, repetitive rating; pulse width limited by max junction temperature | 2 |+| Continuous Drain Current | ID | | | -55 | A | Tc=25°C | 2 |+| Continuous Drain Current | ID | | | -39 | A | Tc=100°C | 2 |+| Maximum Power Dissipation | PD | | | 75 | W | Tc=25°C | 2 |+| Maximum Power Dissipation | PD | | | 37.5 | W | Tc=100°C | 2 |+| Single Pulsed-Avalanche Energy | EAS | | | 343 | mJ | L=0.3mH; limited by TJmax, starting TJ=25°C, VD=-48V, VGS=-10V | 2 |+| Thermal Resistance, Junction-to-Case | RJC | | | 2 | °C/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 110 | °C/W | Surface mounted on FR-4 board | 2 |+ ## CAD (KiCad official) - Symbol: `HYG120P06LR1D`
page.json+260−1@@ -148,6 +148,265 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4e64a85d2b125f64",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, IDS=-250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-60V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.8,+ "max": -3,+ "conditions": "VDS=VGS, IDS=-250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 12.5,+ "max": 16,+ "conditions": "VGS=-10V, ID=-20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 22,+ "conditions": "VGS=-4.5V, ID=-20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.85,+ "max": -1.2,+ "conditions": "ISD=-20A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -60,+ "conditions": "Common ratings (Tc=25°C unless otherwise noted)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Common ratings (Tc=25°C unless otherwise noted)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 175,+ "conditions": "Common ratings (Tc=25°C unless otherwise noted)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "Common ratings (Tc=25°C unless otherwise noted)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -55,+ "conditions": "Tc=25°C, mounted on large heat sink",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -210,+ "conditions": "Tc=25°C, repetitive rating; pulse width limited by max junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -55,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -39,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 37.5,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed-Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 343,+ "conditions": "L=0.3mH; limited by TJmax, starting TJ=25°C, VD=-48V, VGS=-10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Surface mounted on FR-4 board",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +448,4 @@ "visibility": { "public": true }-}+}