component
HYG120P06LR1D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHYG120P06LR1D
HUAYI · MOSFETs · TO-252
HYG120P06LR1D from HUAYI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±20 V, with a threshold of -1.0 V to -3.0 V at IDS=-250uA. |
| 2 | D | passive | Drain, which is also the exposed tab on the TO-252-2L; rated for -60 V drain-source and -55 A continuous at Tc=25°C. |
| 3 | S | passive | Source; carries the continuous source/drain current of -55 A at Tc=25°C, and the body diode forward voltage is -1.2 V max at -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, IDS=-250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | uA | VDS=-60V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -50 | uA | TJ=125°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS, IDS=-250uA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 12.5 | 16 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 18 | 22 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Diode Forward Voltage | VSD | -0.85 | -1.2 | V | ISD=-20A, VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | -60 | V | Common ratings (Tc=25°C unless otherwise noted) | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | Common ratings (Tc=25°C unless otherwise noted) | 2 | |
| Maximum Junction Temperature | TJ | 175 | °C | Common ratings (Tc=25°C unless otherwise noted) | 2 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | Common ratings (Tc=25°C unless otherwise noted) | 2 | |
| Drain Current-Continuous | IS | -55 | A | Tc=25°C, mounted on large heat sink | 2 | ||
| Pulsed Drain Current | IDM | -210 | A | Tc=25°C, repetitive rating; pulse width limited by max junction temperature | 2 | ||
| Continuous Drain Current | ID | -55 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | -39 | A | Tc=100°C | 2 | ||
| Maximum Power Dissipation | PD | 75 | W | Tc=25°C | 2 | ||
| Maximum Power Dissipation | PD | 37.5 | W | Tc=100°C | 2 | ||
| Single Pulsed-Avalanche Energy | EAS | 343 | mJ | L=0.3mH; limited by TJmax, starting TJ=25°C, VD=-48V, VGS=-10V | 2 | ||
| Thermal Resistance, Junction-to-Case | RJC | 2 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 110 | °C/W | Surface mounted on FR-4 board | 2 |
CAD (KiCad official)
- Symbol:
HYG120P06LR1D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hyg120p06lr1d-etched.step/hyg120p06lr1d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hyg120p06lr1d.step/hyg120p06lr1d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (11 pp, sha256
4e64a85d2b125f64, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).