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Contents

README

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HYG120P06LR1D

HUAYI · MOSFETs · TO-252

HYG120P06LR1D from HUAYI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20 V, with a threshold of -1.0 V to -3.0 V at IDS=-250uA.
2 D passive Drain, which is also the exposed tab on the TO-252-2L; rated for -60 V drain-source and -55 A continuous at Tc=25°C.
3 S passive Source; carries the continuous source/drain current of -55 A at Tc=25°C, and the body diode forward voltage is -1.2 V max at -20 A.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, IDS=-250uA 2
Drain-to-Source Leakage Current IDSS -1 uA VDS=-60V, VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 uA TJ=125°C 2
Gate Threshold Voltage VGS(th) -1 -1.8 -3 V VDS=VGS, IDS=-250uA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 12.5 16 mΩ VGS=-10V, ID=-20A 2
Drain-Source On-state Resistance RDS(ON) 18 22 mΩ VGS=-4.5V, ID=-20A 2
Diode Forward Voltage VSD -0.85 -1.2 V ISD=-20A, VGS=0V 2
Drain-Source Voltage VDSS -60 V Common ratings (Tc=25°C unless otherwise noted) 2
Gate-Source Voltage VGSS -20 20 V Common ratings (Tc=25°C unless otherwise noted) 2
Maximum Junction Temperature TJ 175 °C Common ratings (Tc=25°C unless otherwise noted) 2
Storage Temperature Range TSTG -55 175 °C Common ratings (Tc=25°C unless otherwise noted) 2
Drain Current-Continuous IS -55 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM -210 A Tc=25°C, repetitive rating; pulse width limited by max junction temperature 2
Continuous Drain Current ID -55 A Tc=25°C 2
Continuous Drain Current ID -39 A Tc=100°C 2
Maximum Power Dissipation PD 75 W Tc=25°C 2
Maximum Power Dissipation PD 37.5 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 343 mJ L=0.3mH; limited by TJmax, starting TJ=25°C, VD=-48V, VGS=-10V 2
Thermal Resistance, Junction-to-Case RJC 2 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Surface mounted on FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG120P06LR1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hyg120p06lr1d-etched.step / hyg120p06lr1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg120p06lr1d.step / hyg120p06lr1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 4e64a85d2b125f64, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF