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HYG110P04LQ2D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG110P04LQ2D

HUAYI · MOSFETs · TO-252-2L

HYG110P04LQ2D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the datasheet limits gate-source voltage VGSS to ±20 V.
2 D passive Drain of the P-channel MOSFET; the datasheet rates VDSS at -40 V and continuous drain current ID at -50 A (Tc=25°C).
3 S passive Source of the P-channel MOSFET; the datasheet gives no separate pin-level rating for this terminal.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V,IDS=-250uA 2
Drain-to-Source Leakage Current IDSS -1 uA VDS=-40V, VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 uA TJ=125°C 2
Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VDS=VGS, IDS=-250uA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 9.4 12 mΩ VGS=-10V,ID=-20A 2
Drain-Source On-state Resistance RDS(ON) 13 18 mΩ VGS=-4.5V,ID=-20A 2
Diode Forward Voltage VSD -0.82 -1.3 V ISD=-10A,VGS=0V 2
Drain-Source Voltage VDSS -40 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Drain Current-Continuous (source current IS) IS -50 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM -180 A Tc=25°C 2
Continuous Drain Current ID -50 A Tc=25°C 2
Continuous Drain Current ID -35.5 A Tc=100°C 2
Maximum Power Dissipation PD 57.7 W Tc=25°C 2
Maximum Power Dissipation PD 28.8 W Tc=100°C 2
Single Pulsed Avalanche Energy EAS 170 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RTJC 2.6 °C/W 2
Thermal Resistance, Junction-to-Ambient RTJA 110 °C/W Surface mounted on FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG110P04LQ2D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg110p04lq2d-etched.step / hyg110p04lq2d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg110p04lq2d.step / hyg110p04lq2d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 2f65c982a9704cf4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF