component
HYG067N07NQ1D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHYG067N07NQ1D
HUAYI · MOSFETs · TO-252-2L
HYG067N07NQ1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±20 V, threshold 2 to 4 V at IDS=250 µA. |
| 2 | D | passive | Drain, the center position and the exposed tab; rated for VDSS 68 V and 70 A continuous at Tc=25°C. |
| 3 | S | passive | Source; also the body-diode anode, carrying source current up to 70 A continuous at Tc=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V, IDS=250μA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS=68V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 50 | μA | TJ=125°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, IDS=250μA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 6.8 | 8.3 | mΩ | VGS=10V, IDS=30A | 2 | |
| Diode Forward Voltage | VSD | 0.83 | 1.1 | V | ISD=30A, VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | 68 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Maximum Junction Temperature | TJ | -55 | 175 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 2 | ||
| Source Current-Continuous (Body Diode) | IS | 70 | A | Tc=25°C; Mounted on Large Heat Sink | 2 | ||
| Pulsed Drain Current | IDM | 210 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 70 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 49 | A | Tc=100°C | 2 | ||
| Maximum Power Dissipation | PD | 93 | W | Tc=25°C | 2 | ||
| Maximum Power Dissipation | PD | 46 | W | Tc=100°C | 2 | ||
| Single Pulsed-Avalanche Energy | EAS | 192 | mJ | L=0.3mH | 2 | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.6 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 110 | °C/W | Surface mounted on 1in2 FR-4 board | 2 |
CAD (KiCad official)
- Symbol:
HYG067N07NQ1D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hyg067n07nq1d-etched.step/hyg067n07nq1d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hyg067n07nq1d.step/hyg067n07nq1d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (11 pp, sha256
69a18c4e94f52abd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).