HYG065N07NS1B

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  "brief": "HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "subcategory": "MOSFETs",
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        "error": "shared DigiKey quota guard: 546 calls left today"
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        "name": "G",
        "type": "input",
        "description": "Gate; controls the channel, with VGS rated ±20 V absolute maximum and a threshold of 2 V min to 4 V max at 250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain; the middle lead position is cut to a short stub and the drain is also the exposed tab, rated 70 V VDSS and 100 A continuous at Tc=25°C."
      },
      {
        "number": "3",
        "name": "S",
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        "description": "Source; the power return, with body-diode continuous current rated 100 A at Tc=25°C."
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    "specs": {
      "Manufacturer": "HUAYI",
      "Package": "TO-263-2L",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 70,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, IDS=250μA",
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          "name": "Drain-to-Source Leakage Current",
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          "kind": "electrical",
          "unit": "μA",
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          "name": "Drain-to-Source Leakage Current",
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          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "TJ=125°C",
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          "name": "Gate Threshold Voltage",
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          "typ": 3,
          "max": 4,
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        {
          "name": "Gate-Source Leakage Current",
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          "name": "Drain-Source On-State Resistance",
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        {
          "name": "Diode Forward Voltage",
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          "typ": null,
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        },
        {
          "name": "Junction Temperature Range",
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          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
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        },
        {
          "name": "Storage Temperature Range",
          "symbol": "TSTG",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
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        },
        {
          "name": "Source Current-Continuous (Body Diode)",
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          "unit": "A",
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          "typ": null,
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        },
        {
          "name": "Pulsed Drain Current",
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          "typ": null,
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          "conditions": "Tc=25°C, repetitive rating, pulse width limited by max. junction temperature",
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          "conditions": "Tc=100°C",
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        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
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          "unit": "W",
          "min": null,
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          "conditions": "Tc=25°C",
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        {
          "name": "Maximum Power Dissipation",
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          "min": null,
          "typ": null,
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        {
          "name": "Single Pulsed-Avalanche Energy",
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          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 223,
          "conditions": "L=0.3mH, RG=25Ω, VGS=10V, limited by TJmax, starting TJ=25°C",
          "source_page": 2,
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        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RθJC",
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        {
          "name": "Thermal Resistance, Junction-to-Ambient",
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          "conditions": "Surface mounted on 1in² FR-4 board",
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