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Contents

README

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HYG060N08NS1B

HUAYI · MOSFETs · TO-263-2

HYG060N08NS1B from HUAYI, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2 V min to 4 V max at 250 µA.
2 D passive Drain, connected to the exposed tab (middle lead is trimmed in TO-263-2L); rated 80 V VDSS and 105 A continuous at Tc=25°C.
3 S passive Source, also the body diode anode; source current 105 A continuous at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=80V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA VDS=80V,VGS=0V, TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 5.5 6 mΩ VGS=10V,IDS=40A 2
Diode Forward Voltage VSD 0.94 1.2 V ISD=40A,VGS=0V 2
Drain-Source Voltage VDSS 80 V Tc=25°C 2
Gate-Source Voltage VGSS -20 20 V Tc=25°C 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 105 A Tc=25°C, Mounted on Large Heat Sink 2
Pulsed Drain Current IDM 350 A Tc=25°C 2
Continuous Drain Current ID 105 A Tc=25°C 2
Continuous Drain Current ID 74.2 A Tc=100°C 2
Maximum Power Dissipation PD 125 W Tc=25°C 2
Maximum Power Dissipation PD 62.5 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 225 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RJC 1.2 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 62.5 °C/W Surface mounted on 1in2 FR-4 board 2
Reverse Recovery Time trr 45 ns ISD=40A,dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 58 nC ISD=40A,dISD/dt=100A/μs 2
Gate Resistance RG 2.3 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 2950 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Output Capacitance Coss 1190 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 60 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 12 ns VDD=40V,RG=4.0Ω,IDS=40A,VGS=10V 3
Turn-on Rise Time Tr 55 ns VDD=40V,RG=4.0Ω,IDS=40A,VGS=10V 3
Turn-off Delay Time td(OFF) 34 ns VDD=40V,RG=4.0Ω,IDS=40A,VGS=10V 3
Turn-off Fall Time Tf 65 ns VDD=40V,RG=4.0Ω,IDS=40A,VGS=10V 3
Total Gate Charge Qg 48 nC VDS=64V, VGS=10V, IDs=40A 3
Gate-Source Charge Qgs 15 nC VDS=64V, VGS=10V, IDs=40A 3
Gate-Drain Charge Qgd 13 nC VDS=64V, VGS=10V, IDs=40A 3

CAD (KiCad official)

  • Symbol: HYG060N08NS1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2 (KiCad packages3D, STEP)
  • 3D model files: hyg060n08ns1b-etched.step / hyg060n08ns1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg060n08ns1b.step / hyg060n08ns1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 5a3bbc62ce08f930, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF