# HYG053N10NS1B

**HUAYI** · MOSFETs · TO-263-2L

HYG053N10NS1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V and a typical gate threshold of 3 V (2 V min, 4 V max) at VDS=VGS, IDS=250 µA. |
| 2 | D | passive | Drain, shown as the center position in the G-D-S pin picture and connected to the exposed tab; VDSS is 100 V and continuous drain current is 120 A at Tc=25°C. |
| 3 | S | passive | Source; continuous body-diode source current is 120 A at Tc=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 100 | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Junction Temperature Range | TJ | -55 |  | 175 | °C |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 175 | °C |  | 2 |
| Source Current-Continuous (Body Diode) | IS |  |  | 120 | A | Tc=25°C, mounted on large heat sink | 2 |
| Pulsed Drain Current | IDM |  |  | 360 | A | Tc=25°C | 2 |
| Continuous Drain Current | ID |  |  | 120 | A | Tc=25°C | 2 |
| Continuous Drain Current | ID |  |  | 84.8 | A | Tc=100°C | 2 |
| Maximum Power Dissipation | PD |  |  | 187.5 | W | Tc=25°C | 2 |
| Maximum Power Dissipation | PD |  |  | 93.7 | W | Tc=100°C | 2 |
| Single Pulsed-Avalanche Energy | EAS |  |  | 360 | mJ | L=0.3mH | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 0.8 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 62.5 | °C/W | Surface mounted on 1in2 FR-4 board | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, IDS=250μA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 50 | μA | TJ=125°C | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, IDS=250μA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 4.8 | 5.5 | mΩ | VGS=10V, IDS=50A | 2 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.2 | V | ISD=50A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `HYG053N10NS1B`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `hyg053n10ns1b-etched.step` / `hyg053n10ns1b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hyg053n10ns1b.step` / `hyg053n10ns1b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAYI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945673567395840) (10 pp, sha256 `35aac65770b1b905`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hyg053n10ns1b-datasheet.pdf)